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IRFS4227-IRFS4227TRLPBF
200V Single N-Channel HEXFET Power MOSFET PDP Switch in a TO-262 package
International
Tart Rectifier
Features
. Advanced Process Technology
. Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
. Low EPULSE Ratin
g to Reduce Power
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
. Low Cla for Fast Response
. High Repetitive Peak Current Capability for
Reliable Operation
. Short Fall & Rise Times for Fast Switching
.175°C Operating Junction Temperature for
Improved Ruggedness
. Repetitive Avalanche Capability for
Robustness and Reliability
Description
PDP SWITCH
PD - 96131A
IRFS4227PbF
llRFSL4227 DbF
Key Parameters
VDS max 200 v
VDs (Avalanche) typ. 240 V
Rosm) typ. @ 10V 22 mg
lm, max @ TC: 100°C 130 A
T J max 175 00
. / . T Tr)»
''(1ijii)ir, S ii(,iitr,
D "s. u, 1, a S
D2Pak TO-262
IRFS4227PbF IRFSL4227PbF
Gate Drain Source
This HEXFETQ Power MOSFET is specifically designed for Sustain, Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to
achieve low on-resistance per silicon area and low EPULSE rating. Additional features ofthis MOSFET are
175°C operating junction temperature and high repetitive peak current capability. These features
combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications
Absolute Maximum Ratings
Parameter Max. Units
l/es Gate-to-Source Voltage :30 V
lo © To = 25°C Continuous Drain Current, I/ss © 10V 62
ID @ TC = 100°C Continuous Drain Current, Vas @ 10V 44 A
bs, Pulsed Drain Current C) 260
a, @ To = 100°C Repetitive Peak Current (S) 130
PD ©Tc = 25°C Power Dissipation 330 W
PD @Tc = 100°C Power Dissipation 190
Linear Derating Factor 2.2 W/°C
T, Operating Junction and -40 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature for 10 seconds 300
Mounting Torque, 6-32 or M3 Screw 10lbFin (1 .1N-m) N
Thermal Resistance
Parameter Typ. Max. Units
FUc Junction-to-Case Ci) - 0.45'
RBJA Junction-to-Ambient (PCB Mounted) D2Pak © - 40
* Rouc (end of life) for D2Pak and TO-262 = O.65°C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.
Notes (O through © are on page 8
1

12/06/08
IRFS/SL4227PbF
International
TOR Rectifier
Electrical Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 200 - - V Vas = 0V, ID = 250pA
ABVDss/ATJ Breakdown Voltage Temp. Coefficient - 170 - mV/°C Reference to 25°C, lo = 1mA
Roam Static Drain-to-Source On-Resistance - 22 26 mo Ves = 10V, ID = 46A ©
VGSW Gate Threshold Voltage 3.0 - 5.0 V Vos = Vss, ID = 250pA
AVGSW/ATJ Gate Threshold Voltage Coefficient - -13 - mV/°C
loss Drain-to-Source Leakage Current - - 20 pA Vos = 200V, I/as = 0V
- - 200 pA VDS = 200V, Vss = 0V, Tu = 125°C
lass Gate-to-Source Forward Leakage - - 100 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
gts Forward Transconductance 49 - - S Vos = 25V, ID = 46A
q, Total Gate Charge - 70 98 nC Va, = 100V, lr, = 46A, Ves = 10V©
di Gate-to-Drain Charge - 23 -
tom Turn-On Delay Time - 33 - VDD = 100V, Vas = 10V Cl)
t, Rise Time - 20 - ns '0 = 46A
tom Turn-Off Delay Time - 21 - Rs = 2.59
t, Fall Time - 31 - See Fig. 22
ts! Shoot Through Blocking Time 100 - - ns VDD = 160V, Vas = 15V, Rs: 4.79
- 570 - L = 220nH, C-- 0.4pF, Vss =15V
EF,ULSE Energy per Pulse pJ VDS = 160V, Rs-- 4.79, TJ = 25°C
L = 220nH, C= 0.4pF, I/ss =15V
- 910 - Vos = 160V, Rs-- 4.79, T, = 100°C
Ciss Input Capacitance - 4600 - Vas = 0V
Coss Output Capacitance - 460 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 91 - f = 1.0MHz,
cu, eff. Effective Output Capacitance - 360 - l/ss = 0V, Vos = 0V to 160V
u, Internal Drain Inductance - 4.5 - Between lead, D
nH 6mm (0.25in.) (ii-l-i,')
Ls Internal Source Inductance - 7.5 - from package G L)
and center of die contact s
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 140 mJ
EAR Repetitive Avalanche Energy OD - 46 md
VDSMHIanche) Repetitive Avalanche Voltage C) 240 - V
has Avalanche Current © - 37 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls @ Tc = 25°C Continuous Source Current - _ 62 MOSFET symbol All
(Body Diode) A showing the L-,
ISM Pulsed Source Current - _ 260 Integral T"".'."' G T,
(Body Diode) (D p-n junction diode. e
VSD Diode Forward Voltage - - 1.3 v Tu = 25°C, Is = 46A, Vss = 0V (3)
trr Reverse Recovery Time - 100 150 ns TJ = 25°C, IF = 46A, VDD = 50V
a,, Reverse Recovery Charge - 430 640 nC di/dt = 100A/ps ©
2

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