IC Phoenix
 
Home ›  II33 > IRFS614B,250V N-Channel MOSFET
IRFS614B Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
IRFS614BFSCN/a454avai250V N-Channel MOSFET


IRFS614B ,250V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 2.8A, 250V, R = 2.0Ω @V = 10 VDS(on) ..
IRFS630A ,Advanced Power MOSFETIRFS630AAdvanced Power MOSFET
IRFS630B ,200V N-Channel MOSFETIRF630B/IRFS630BOctober 2001IRF630B/IRFS630B200V N-Channel MOSFET
IRFS634B ,250V N-Channel MOSFETIRF634B/IRFS634BNovember 2001IRF634B/IRFS634B250V N-Channel MOSFET
IRFS634B. ,250V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 8.1A, 250V, R = 0.45Ω @V = 10 VDS(on) ..
IRFS640 ,200V N-Channel MOSFETIRF640B/IRFS640BNovember 2001IRF640B/IRFS640B200V N-Channel MOSFET
ISL90840UIV2027 , Quad Digitally Controlled Potentiometers (XDCP)
ISL90842WIV1427Z , Quad Digitally Controlled Variable Resistors
ISL9106IRZ-T , 1.2A 1.6MHz Low Quiescent Current High Efficiency Synchronous Buck Regulator
ISL9200IRZ , Charging System Safety Circuit
ISL9200IRZ-T , Charging System Safety Circuit
ISL9201IRZ , Li-ion Battery Charger


IRFS614B
250V N-Channel MOSFET
IRF614B/IRFS614B November 2001 IRF614B/IRFS614B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.8A, 250V, R = 2.0Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 8.1 nC) planar, DMOS technology. • Low Crss ( typical 7.5 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. D G TO-220 TO-220F G D S G D S IRF Series IRFS Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter IRF614B IRFS614B Units V Drain-Source Voltage 250 V DSS I - Continuous (T = 25°C) Drain Current 2.8 2.8 * A D C - Continuous (T = 100°C) 1.8 1.8 * A C I (Note 1) Drain Current - Pulsed 8.5 8.5 * A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 45 mJ AS I Avalanche Current (Note 1) 2.8 A AR E (Note 1) Repetitive Avalanche Energy 4.0 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns P Power Dissipation (T = 25°C) 40 22 W D C - Derate above 25°C 0.32 0.18 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter IRF614B IRFS614B Units R Thermal Resistance, Junction-to-Case Max. 3.14 5.58 °C/W θJC R Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient Max. 62.5 62.5 °C/W θJA ©2001 Rev. A, November 2001
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED