IC Phoenix
 
Home ›  II33 > IRFSL11N50A,500V Single N-Channel HEXFET Power MOSFET in a TO-262 package
IRFSL11N50A Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
IRFSL11N50AIRN/a2356avai500V Single N-Channel HEXFET Power MOSFET in a TO-262 package


IRFSL11N50A ,500V Single N-Channel HEXFET Power MOSFET in a TO-262 packagePD- 91847AIRFSL11N50A®HEXFET Power MOSFETl Dynamic dv/dt RatingDl Repetitive Avalanche RatedV = 500 ..
IRFSL3107PBF ,75V Single N-Channel HEXFET Power MOSFET in a TO-262 package IRFS3107PbFIRFSL3107PbFHEXFET Power MOSFET
IRFSL31N20DPBF ,200V Single N-Channel HEXFET Power MOSFET in a TO-262 packagePD- 93805BIRFB31N20D IRFS31N20DSMPS MOSFETIRFSL31N20D®HEXFET Power MOSFET
IRFSL3206 ,60V Single N-Channel HEXFET Power MOSFET in a TO-262 packageApplications High Efficiency Synchronous RectificationDV 60VDSSin SMPSR typ.2.4m

IRFSL11N50A
500V Single N-Channel HEXFET Power MOSFET in a TO-262 package
PD-91847A
IRFSL.r1N50A
HEXFET® Power MOSFET
International
TOR Rectifier
0 Dynamic dv/dt Rating D
o Repetitive Avalanche Rated V = 500V
. Fast Switching DSS
. Ease of Paraleling -
. Simple Drive Requirements G FN RDS(On) - 0559
I = 11A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
T O -2 6 2
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, VGs @ 10V 11
ID @ Tc = 100''C Continuous Drain Current, VGS @ 10V 7.0 A
IDM Pulsed Drain Current © 44
Pro @Tc = 25°C Power Dissipation 190 W
Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage , 30 V
EAS Single Pulse Avalanche Energy© 390 mJ
IAR Avalanche Current© 11 A
EAR Repetitive Avalanche Energyc0 19 mJ
dv/dt Peak Diode Recovery dv/dt © 4.1 V/ns
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range "C
Soldering Temperature, tor 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
ReJc Junction-to-Case - 0.75 "C
ReJA Junction-to-Ambient - 4O
1
9/2/99
|RFSL11N50A
International
TOR Rectifier
Electrical Characteristics © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 500 - - V VGS = 0V, lo = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.57 - V/°C Reference to 25''C, lo = 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 0.55 n VGS = 10V, ID = 6.6A (f)
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Ws = Kas, ID = 250pA
9ts Forward Transconductance 6.0 - - S I/os = 50V, ID = 6.6A
loss Drain-to-Source Leakage Current - - 25 pA l/os = 500V, I/cs = 0V
- - 250 Vos = 400V, VGs = ov, TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGs = 30V
Gate-to-Source Reverse Leakage - - -100 l/ss = -30V
% Total Gate Charge - - 51 ID = 11A
095 Gate-to-Source Charge - - 12 nC N/os = 400V
di Gate-to-Drain ("Miller") Charge - - 23 Vcs = 10V, See Fig. 6 and 13 ©
td(on) Turn-On Delay Time - 14 - VDD = 250V
tr Rise Time - 34 - ns ID = 11A
tum) Turn-Off Delay Time - 32 - Rs = 9.19
k Fall Time - 27 - R9 = 22n,See Fig. 10 ©
. Between lead, D
Lo Internal Drain Inductance - 4.5 - nH 6mm (0.25in.) f )
Ls Intemal Source Inductance - 7.5 - from package . G _
and center of die contact s
Ciss Input Capacitance - 1426 - VGS = 0V
CDSS Output Capacitance - 208 - Vros = 25V
Crss Reverse Transfer Capacitance - 9.6 - pF f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 1954 - I/cs = 0V, VDs = 1.0V, f = 1.0MHz
Coss Output Capacitance - 53 - VGs = 0V, 1/ros = 400V, f = 1.0MHz
Coss eff. Effective Output Capacitance s - 110 - VGs = 0V, Vos = 0V to 400V
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 1 1 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 44 integral reverse G
(Body Diode) OD p-n junction diode. s
I/sro Diode Forward Voltage - - 1.5 V TJ = 25°C, Is = 11A, Was = 0V ©
tn Reverse Recovery Time - 530 790 ns To = 25°C, IF = 11A
Qrr Reverse RecoveryCharge - 3.4 5.1 pC di/dt = 100Alps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© Starting T J = 25°C, L = 6.4mH
Rc-- 259, IAS-- 11A. (See Figure 12)
© ISD 3 11A, di/dt s 185A/ps, vDD s V(SR)oss,
TJs175°c
© Pulse width 5 300ps; duty cycle s: 2%.
(S) Cass eff. is a foted capacitance that gives the same charging time
as Coss while VDs is rising from 0 to 80% VDss

ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED