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IRFSL9N60AIRN/a800avai600V Single N-Channel HEXFET Power MOSFET in a TO-262 package


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IRFSL9N60A
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
PD - 91814A
International
. . SMPS MOSFET
TOR Rectifier IRFSL9N60A
HEXFET® Power MOSFET
Applications
0 Switch Mode Power Supply ( SMPS ) Voss Rds(on) max ID
o Uninterruptable Power Supply 600V 0.759 9.2A
0 High speed power switching
o This device is only for through hole
application.
Benefits
o Low Gate Charge Qg results in Simple G D s
Drive Requirement TO-262
o Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
o Fully Characterized Capacitance and
Avalanche Voltage and Current
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 9.2
ID @ Tc = 100°C Continuous Drain Current, l/ss @ 10V 5.8 A
IDM Pulsed Drain Current C) 37
Pp @Tc = 25°C Power Dissipation 170 W
Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage , 30 V
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
T J Operating Junction and -55 to + 150
TSTG Storage Temperature Range DC
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Applicable Off Line SMPS Topologies:
o Active Clamped Forward
q Main Switch
Notes (D through (9 are on page 8
1
12/23/98
IRFSL9N60A
International
. . . . TOR Rectifier
Static © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 600 - - V Was = 0V, ID = 250pA
RDs(on) Static Drain-to-Source On-Resistance - - 0.75 Q VGs = 10V, ID = 5.5A GD
Vesah) Gate Threshold Voltage 2.0 - 4.0 V VDs = I/ss, ID = 250PA
loss Drain-to-Source Leakage Current - - 25 pA Vros = 600V, VGS = 0V
- - 250 Vos = 480V, Ves = 0V, Tu = 150°C
I Gate-to-Source Forward Leakage - - 100 nA VGS = 30V
GSS Gate-to-Source Reverse Leakage - - -100 l/cs = -30V
Dynamic @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gts Forward Transconductance 5.5 - - S Vos = 25V, ID = 3.1A
% Total Gate Charge - - 49 ID = 9.2A
Qgs Gate-to-Source Charge - - 13 nC Ws = 400V
di Gate-to-Drain ("Miller") Charge - - 20 V68 = 10V, See Fig. 6 and 13 ©
td(on) Turn-On Delay Time - 13 - VDD = 300V
tr Rise Time - 25 - ns ID = 9.2A
tam) Turn-Off Delay Time - 30 - Rs = 9.19
tr Fall Time - 22 - Ro = 35.59,See Fig. 10 co
Ciss Input Capacitance - 1400 - VGS = 0V
Coss Output Capacitance - 180 - Vros = 25V
Crss Reverse Transfer Capacitance - 7.1 - pF f = 1.0MHz, See Fig. 5
Coss Output Capacitance --- 1957 - VGs = 0V, VDs = 1.0V, f = 1.0MHz
Coss Output Capacitance - 49 - Veg = 0V, l/os = 480V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 96 - VGs = 0V, Vos = 0V to 480V s
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 290 mJ
IAR Avalanche Current© - 9.2 A
EAR Repetitive Avalanche EnergyCD - 17 mJ
Thermal Resistance
Parameter Typ. Max. Units
RBJC Junction-to-Case - 0.75
RNA Junction-to-Ambient (PCB Mounted,steady-state) - 40 °CNV
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current 9 2 MOSFET symbol D
(Body Diode) - - . A showing the
ISM Pulsed Source Current 37 integral reverse G
(Body Diode) © - - p-n junction diode. s
VSD Diode Forward Voltage - - 1.5 V To = 25°C, ls = 9.2A, VGS = 0V ©
trr Reverse Recovery Time - 530 800 ns T J = 25°C, IF = 9.2A
G, Reverse RecoveryCharge - 3.0 4.4 PC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
2
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