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IRG4BC20FPBF
600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package
International PD-95742
TOR, Rectifier IRG4BC20FPbF
INSULATED GATEBIPOLARTRANSISTOR Fast Speed IGBT
Features C
. Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20 VCES = 600V
kHz in resonant mode).
. Generation 4 IGBT design provides tighter G VCE(on) typ. = 1.66V
parameter distribution and higher efficiency than
Generation 3 - -
. Industry standard TO-220AB package E @VGE - 15V, lc 9.0A
. Lead-Free n-channel
Benefits
- Generation 4 IGBTs offer highest efficiency available
. IGBTs optimized for specired application conditions
. Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 600 V
Ic @ Tc = 25''C Continuous Collector Current 16
k: @ Tc = 100°C Continuous Collector Current 9.0 A
ICM Pulsed Collector Current (D 64
ILM Clamped Inductive Load Current © 64
N/ss Gate-to-Emitter Voltage , 20 V
EARV Reverse Voltage Avalanche Energy © 5.0 mJ
PD @ Tc = 25°C Maximum Power Dissipation 60 W
PD @ To = 100°C Maximum Power Dissipation 24
Tu Operating Junction and -55 to + 150
Tsms Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
Mounting torque, 6-32 or M3 screw. 10 lbf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rouc Junction-to-Case - 2.1
Recs Case-to-Sink, Flat, Greased Surface 0.5 - ''CAIV
RQJA Junction-to-Ambient, typical socket mount - 80
Wt Weight 2.0 (0.07) - g (oz)
1
8/23/04
IRG4BC20FPbF
International
IEZR 'kyctifier
Electrical Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CEs Collector-to-Emitter Breakdown Voltage 600 - - V VGE = 0V, IC = 250pA
V(BR)ECS Emitter-to-Collector Breakdown Voltage (9 18 - - V VGE = 0V, k: = 1.0A
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.72 - V/°C VGE = 0V, Ic = 1.0mA
- 1.66 2.0 Ic = 9.0A VGE = 15V
VCE(0N) Collector-to-Emi) Saturation Voltage - 2.06 - V Ic = 16A See Fig.2, 5
- 1.76 - Ic = 9.0A t TJ = 150°C
VGEM Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, lc = 250PA
AVGE(th)/ATJ Temperature Coeff. of Threshold Voltage - -11 - mV/°C VCE = VGE, Ic = 250pA
ge, Forward Transconductance s 2.9 5.1 - S VCE = 100V, k: = 9.0A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = OV, VCE = 600V
- - 2.0 VGE = 0V, VCE = 10V, TJ = 25''C
- - 1000 VGE = 0V, VCE = 600V, Tu = 150°C
IGES Gate-to-Emitter Leakage Current - - i100 nA VGE = t20V
Switching Characteristics @ To = 25°C (un
less otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) - 27 40 Ic = 9.0A
Qge Gate - Emitter Charge (turn-on) - 4.2 6.2 nC Vcc = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) - 9.9 15 VGE = 15V
td(on) Turn-On Delay Time - 24 -
tr Rise Time - 17 - ns Tu = 25°C
tum) Turn-Off Delay Time - 190 280 Ic = 9.0A, Vcc = 480V
tf Fall Time - 210 320 VGE = 15V, Rs = 509
E0n Turn-On Switching Loss - 0.07 - Energy losses include "tail"
Es, Turn-Off Switching Loss - 0.60 - mJ See Fig. 9, 10, 14
G Total Switching Loss - 0.67 1.1
td(on) Turn-On Delay Time - 24 - TJ = 150°C,
tr Rise Time - 17 - ns Ic = 9.0A, Vcc = 480V
List) Turn-Off Delay Time - 300 - VGE = 15V, Rs = 509
tf Fall Time - 340 - Energy losses include "tail"
G Total Switching Loss - 1.30 - mJ See Fig. 11, 14
LE Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 540 - VGE = 0V
Coes Output Capacitance - 37 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 7.0 - f = 1.0MHz
Notes:
C) Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
© Vcc = 80%(VCE3), VGE = 20V, L = 10pH, Rs = 509,
(See fig. 13a)
© Repetitive rating; pulse width limited by maximum
junction temperature.
co Pulse width s 80ps; duty factor 5 0.1%.
S Pulse width 5.0ps, single shot.
