IRG4BC40F ,600V Fast 1-8 kHz Discrete IGBT in a TO-220AB packageFeatures C Fast: optimized for medium operatingV = 600VCES frequencies ( 1-5 kHz in hard switchi ..
IRG4BC40FPBF ,600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package
IRG4BC40K ,600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB packageFeatures Short Circuit Rated UltraFast: optimized for highV = 600VCES operating frequencies >5.0 ..
IRG4BC40S ,600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB packageFeatures C Standard: optimized for minimum saturationV = 600VCES voltage and low operating freq ..
IRG4BC40U ,600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB packageFeatures C• UltraFast: optimized for high operatingV = 600VCES frequencies 8-40 kHz in hard switc ..
IRG4BC40UPBF ,600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package
ISO7220MDR ,Dual Channel, 2/0, 150Mbps Digital Isolator 8-SOIC -40 to 125Maximum Ratings table....... 6• Changed in ROC table Max col, V row from VCC to 5.5 . 7IH• Changed ..
ISO7221AD ,Dual Channel, 1/1, 1Mbps Digital Isolator 8-SOIC -40 to 125Featuresbalanced signal, then differentiated by the capacitive1• 1, 5, 25, and 150-Mbps Signaling R ..
ISO7221ADR ,Dual Channel, 1/1, 1Mbps Digital Isolator 8-SOIC -40 to 125Maximum Ratings table....... 6• Changed in ROC table Max col, V row from VCC to 5.5 . 7IH• Changed ..
ISO7221ADRG4 ,Dual Channel, 1/1, 1Mbps Digital Isolator 8-SOIC -40 to 125Electrical Characteristics—2.8-V V and VCC1 CC212.3 Receiving Notification of Documentation Updates ..
ISO7221BD ,Dual Channel, 1/1, 5Mbps Digital Isolator 8-SOIC -40 to 125Featuresbalanced signal, then differentiated by the capacitive1• 1, 5, 25, and 150-Mbps Signaling R ..
ISO7221BDR ,Dual Channel, 1/1, 5Mbps Digital Isolator 8-SOIC -40 to 125Maximum Ratings table....... 6• Changed in ROC table Max col, V row from VCC to 5.5 . 7IH• Changed ..
IRG4BC40F
600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package
Internet onol
TOR Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
PD - 91454B
IRG4BC40F
Fast Speed IGBT
Features
. Fast: optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
. Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
. Industry standard TO-220AB package
n-channel
VCES = 600V
VCE(on)typ, = 1 .50V
E @VGE=15V, lc=27A
Benefits
. Generation 4 IGBTs offer highest efficiency available
. IGBTs optimized for specified application conditions
. Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
Vcss Collector-to-Emitter Breakdown Voltage 600 V
k: © To = 25°C Continuous Collector Current 49
IC @ To = 100°C Continuous Collector Current 27 A
ICM Pulsed Collector Current co 200
u, Clamped Inductive Load Current © 200
Vss Gate-to-Emitter Voltage 1 20 V
EARV Reverse Voltage Avalanche Energy s 15 W
PD @ To = 25°C Maximum Power Dissipation 160 W
PD @ To = 100°C Maximum Power Dissipation 65
To Operating Junction and -55 to + 150
TSTG Storage Temperature Range (
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
RQJC Junction-to-Case - 0.77
Recs Case-to-Sink, Flat, Greased Surface 0.50 - °C/W
RQJA Junction-to-Ambient, typical socket mount - 80
Wt Weight 2.0 (0.07) - g (oz)
1
4/17/2000
|RG4BC4OF International
TOR Rectifier
Electrical Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(Bmmas Collector-to-Emitter Breakdown Voltage 600 - - V VGE = 0V, lc = 250pA
V(Bmgcs Emitter-to-Collector Breakdown Voltage © 18 - - V VGE = 0V, Ic = 1.0A
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.70 - V/°C Vas = 0V, Ic = 1.0mA
- 1.50 1.7 IC = 27A VGE = 15V
VCE(ON) Collector-to-Emi) Saturation Voltage - 1.85 - V Ic = 49A See Fig.2, 5
- 1.56 - lc = 27A , TJ = 150°C
Vss(th) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, lc = 250PA
AVGE(th)/ATJ Temperature Coeff. of Threshold Voltage - -12 - ml/PC VCE = VGE, Ic = 250PA
ge, Forward Transconductance s 9.2 12 - S VCE = 100V, Ic = 27A
Ices Zero Gate Voltage Collector Current - - 250 pA l/ss = OV, VCE = 600V
- - 2.0 VGE = 0V, VCE = 10V, To = 25°C
- - 1000 VGE = 0V, VCE = 600V, To = 150°C
legs Gate-to-Emitter Leakage Current - - i100 nA Vas = :20V
Switching Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
ch Total Gate Charge (turn-on) - 100 150 IC = 27A
099 Gate - Emitter Charge (turn-on) - 15 23 nC Vcc = 400V See Fig. 8
(h, Gate - Collector Charge (turn-on) - 35 53 V95 = 15V
td(on) Turn-On Delay Time - 26 -
t, RiseTime - 18 - ns Tu = 25°C
tdm) Turn-Off Delay Time - 240 360 IC = 27A, Vcc = 480V
tt FaIITime - 170 250 Vas = 15V, Rs = lon
Eon Turn-On Switching Loss - 0.37 - Energy losses include "tail"
fis, Turn-Off Switching Loss - 1.81 - tttl See Fig. IO, 11, 13, 14
Ee Total Switching Loss - 2.18 2.8
tdmn) Turn-On Delay Time - 25 - T: = 150°C,
tr RiseTime - 21 - ns Ic = 27A, Vcc = 480V
tam) Turn-Off Delay Time - 380 - VGE = 15V, Rs = lon
t: FaIITime - 310 - Energy losses include "tail"
EU Total Switching Loss - 3.9 - nl) See Fig. 13, 14
LE Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 2200 - I/SE = 0V
Coes Output Capacitance - 140 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 29 - f =1.0MHz
Notes:
C) Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
© Vcc = 80%(VCEs), Vas-- 20V, L = 10pH, Rs = Ion, © Pulse width s 80ps; duty factor 3 0.1%.
(See fig. 13a) s Pulse width 5.0ps, single shot.
© Repetitive rating; pulse width limited by maximum
junction temperature.
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