IRG4PH40K ,1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC packageFeatures High short circuit rating optimized for motor control,V = 1200VCES t =10µs, V = 720V , ..
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TOR RectifierINSULATED GATE BIPOLAR TRANSISTOR
Short Circuit Rated
UItraFast IGB ..
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IRG4PH40K
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package
International
IEZR Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
PD - 915783
IRG4PH40K
Short Circuit Rated
UItraFast IGBT
Features
. High short circuit rating optimized for motor control,
tsc =10ps, Vcc= 720V , TJ = 125°C,
VGE = 15V
. Combines low conduction losses with high
switching speed
. Latest generation design provides tighter parameter
distribution and higher efficiency than previous
generations
VCES = 1200V
VCE(on) typ. I 2.74V
E @VGE=15V, Ic-- 15A
n-channel
Benefits
. As a Freewheeling Diode we recommend our
HEXFREDTM ultrafast, ultrasoft recovery diodes for
minimum EMI / Noise and switching losses in the
Diode and IGBT
. Latest generation 4 IGBT's offer highest power
density motor controls possible
. This part replaces the IRGPH40K and IRGPH40M
devices
r)r9.i.'.eaT'
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 1200 V
IC @ Tc = 25°C Continuous Collector Current 30
lo @ Tc = 100°C Continuous Collector Current 15 A
ICM Pulsed Collector Current co 60
ILM Clamped Inductive Load Current © 60
tsc Short Circuit Withstand Time 10 us
Vss Gate-to-Emitter Voltage t20 V
EARV Reverse Voltage Avalanche Energy (3 180 mJ
Po @ To = 25°C Maximum Power Dissipation 160 W
Po @ To = 100°C Maximum Power Dissipation 65
Tu Operating Junction and -55 to +150
Tsms Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1 .6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rsuc Junction-to-Case - 0.77
Recs Case-to-Sink, Flat, Greased Surface 0.24 - °C/W
ReJA Junction-to-Ambient, typical socket mount - 40
Wt Weight 6 (0.21) - g (oz)
1
2/7/2000
IRG4PH40K
Electrical Characteristics © T J = 25°C (unless otherwise specified)
International
TOR Rectifier
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 - - V VGE = 0V, Ic = 250pA
V(BR)ECS Emitter-to-Collector Breakdown Voltage Ci) 18 - - V VGE = 0V, Ic = 1.0A
AV(BR)CE5/ATJ Temperature Coeff. of Breakdown Voltage - 0.37 - VPC l/ss = 0V, IC = 1.0mA
- 2.54 - k, = 10A
VCE(ON) Collector-to-emitter Saturation Voltage - 2.74 3.4 V lc = 15A Vas = 1_5V
- 3.29 - Ic = 30A See Fig.2, 5
- 2.53 - Ic= 15A,TJ= 150°C
VGE(th) Gate Threshold Voltage 3.0 - 6.0 VCE = Vas, Ic = 250pA
AVGEahyATJ Temperature Coeff. of Threshold Voltage - -3.3 - mV/°C VCE = Var, k: = 250pA
ge Forward Transconductance S 8.0 12 - S VCE = 100 V, IC = 15A
- - 250 Vas = 0V, I/cs = 1200V
ICES Zero Gate Voltage Collector Current - - 2.0 pA VGE = 0V, VCE = 10V, TJ = 25°C
- - 3000 Vas = 0V, I/cs = 1200V, TJ = 150°C
legs Gate-to-Emitter Leakage Current - - :100 nA Vas = t20V
Switching Characteristics © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
09 Total Gate Charge (turn-on) - 94 140 lc = 15A
Qge Gate - Emitter Charge (turn-on) - 14 22 nC Vcc = 400V See Fig.8
Qgc Gate - Collector Charge (turn-on) - 37 55 Vas = 15V
td(on) Turn-On Delay Time - 30 -
t, Rise Time - 22 - ns Tu = 25°C
tdm) Turn-Off Delay Time - 200 300 lc = 15A, Vcc = 960V
t, Fall Time - 150 230 VGE = 15V, Rs = 109
Eon Turn-On Switching Loss - 0.73 - Energy losses include "tail"
Est Turn-Off Switching Loss - 1.66 - mJ See Fig. 9,10,14
Ee Total Switching Loss - 2.39 2.9
tsc Short Circuit Withstand Time 10 - - us Vcc = 720V, To = 125°C
VGE =15V, Rs =10n
tum) Turn-On Delay Time - 29 - TJ = 150°C,
tr Rise Time - 24 - k: = 15A, Vcc = 960V
tum) Turn-Off Delay Time - 870 - ns Vas = 15V, Rs = lon
tf Fall Time - 330 - Energy losses include "tail"
Ee, Total Switching Loss - 4.93 - mJ See Fig. 10,11,14
Eon Turn-On Switching Loss - 0.37 - TJ = 25°C, I/SE = 15V, Rs = lon
Est Turn-Off Switching Loss - 0.89 - mJ lc = 10A, Vcc = 960V
Ets Total Switching Loss - 1.26 - Energy losses include "tail"
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 1600 - VGE = 0V
CoeS Output Capacitance - 77 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 26 - f = 1.0MHz
Details of note co through s are on the last page
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