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IRG4PH40UD-E
Leaded 1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package
International
:raRliUctifier
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
PD-91621C
IRG4PH40UD
UItraFast CoPack IGBT
Features
- UltraFast: Optimized for high operating
frequencies up to 40 kHz in hard switching,
>200 kHz in resonant mode
. New IGBT design provides tighter
parameter distribution and higher ethciency than
previous generations
. IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
n-channel
VCES = 1200V
@VGE = 15V, Ic = 21A
bridge configurations
. Industry standard TO-247AC package
Benefits
. Higher switching frequency capability than
competitive IGBTs
. Highest efficiency available
. HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
TO-247PC
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 1200 V
Ic @ Tc = 25°C Continuous Collector Current 41
Ic @ Tc = 100°C Continuous Collector Current 21
ICM Pulsed Collector Current C) 82
ILM Clamped Inductive Load Current © 82 A
IF @ Tc = 100°C Diode Continuous Forward Current 8.0
IFM Diode Maximum Forward Current 130
l/se Gate-to-Emitter Voltage i 20 V
Pro @ Tc = 25°C Maximum Power Dissipation 160 W
Pro @ Tc = 100°C Maximum Power Dissipation 65
Tu Operating Junction and -55 to + 150
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
Mounting torque, 6-32 or M3 screw. 10 lbf-in (1.1N-m)
Thermal Resistance
Parameter Min Typ. Max. Units
ReJC Junction-to-Case - IGBT - - 0.77
Rouc Junction-to-Case - Diode - - 1 .7 ''CAlV
Recs Case-to-Sink, flat, greased surface - 0.24 -
RQJA Junction-to-Ambient, typical socket mount - - 40
Wt Weight - 6 (0.21) - g (oz)
1
1/24/06
International
IRG4PH40UD IEZR 'kyctifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emile/vm Voltages 1200 - - V VGE = 0V, Ic = 250pA
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.43 - V/°C VGE = 0V, Ic = 1.0mA
Vegan) Collector-to-Emitter Saturation Voltage - 2.43 3.1 Ic = 21A l/se = 15V
- 2.97 - V k: = 41A See Fig. 2, 5
- 2.47 - k: = 21A, Tu = 150°C
VGEM Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, IC = 250pA
AVGE(th)/ATJ TemperatureCoeff.ofThresholdVoltage - -11 - mV/°C VCE = VGE, Ic = 250pA
9te Forward Transconductance (43 16 24 - S VCE = 100V, Ic = 21A
ICES Zero Gate Voltage Collector Current - - 250 pA l/se = 0V, VCE = 1200V
- - 5000 Vas = 0V, VCE = 1200V, Tu = 150''C
VFM Diode Forward Voltage Drop - 2.6 3.3 V k: = 8.0A See Fig. 13
- 2.4 3.1 Ic = 8.0A, TJ = 125°C
IGEs Gate-to-EmitterLeakageCurrent - - i100 nA VGE = t20V
Switching Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (turn-on) - 86 130 Ic = 21A
Qge Gate - Emitter Charge (turn-on) - 13 20 nC Vcc = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) - 29 44 l/se = 15V
tdon) Turn-On Delay Time - 46 - Tu = 25°C
tr Rise Time - 35 - ns IC = 21A, Vcc = 800V
td(off) Turn-Off Delay Time - 97 150 VGE = 15V, Rs = lon
tf Fall Time - 240 360 Energy losses include "tail" and
Eon Turn-On Switching Loss - 1.80 - diode reverse recovery.
Es, Turn-Off Switching Loss - 1.93 - mJ See Fig. 9, 10, 18
Ets Total Switching Loss - 3.73 4.6
tdon) Turn-On Delay Time - 42 - Tu = 150°C, See Fig. 11, 18
tr Rise Time - 32 - ns Ic = 21A, Vcc = 800V
td(oit) Turn-Off Delay Time - 240 - VGE = 15V, Rs = lon
tt Fall Time - 510 - Energy losses include "tail" and
Ets Total Switching Loss - 7.04 - mJ diode reverse recovery.
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 1800 - VGE = 0V
Goes Output Capacitance - 120 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 18 - f = 1.0MHz
trr Diode Reverse Recovery Time - 63 95 ns Tu = 25°C See Fig.
- 106 160 Tu =125°C 14 IF = 8.0A
Irr Diode Peak Reverse Recovery Current - 4.5 8.0 A Tu = 25°C See Fig.
- 6.2 11 Tu =125°C 15 VR = 200V
Qrr Diode Reverse Recovery Charge - 140 380 nC Tu = 25°C See Fig.
- 335 880 Tu = 125°C 16 di/dt = 200/Vps
di(rec)M/dt Diode Peak Rate of Fall of Recovery - 133 - Alps Tu = 25°C See Fig.
During h, - 85 - Tu = 125°C 17
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