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IRG4PH50U |IRG4PH50UIR N/a3000avai1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package


IRG4PH50U ,1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC packageFeatures UltraFast: Optimized for high operatingV = 1200V frequencies up to 40 kHz in hard switc ..
IRG4PH50UD ,1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC packageFeatures• UltraFast: Optimized for high operatingV = 1200VCES frequencies up to 40 kHz in hard s ..
IRG4PH50UDPBF ,1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC packageFeatures• UltraFast: Optimized for high operatingV = 1200VCES frequencies up to 40 kHz in hard s ..
IRG4PSC71K ,600V UltraFast 8-25 kHz Discrete IGBT in a TO-274AA packageFeaturesV = 600VCES• Hole-less clip/pressure mount package compatible with TO-247 and TO-264, w ..
IRG4PSC71KD ,600V UltraFast 8-25 kHz Copack IGBT in a TO-274AA packageFeaturesV = 600V• Hole-less clip/pressure mount package compatibleCES with TO-247 and TO-264, w ..
IRG4PSC71U ,600V UltraFast 8-60 kHz Discrete IGBT in a TO-274AA packageFeatures C• UltraFast switching speed optimized for operatingV = 600VCES frequencies 8 to 40kHz ..
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IRG4PH50U
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package
International
TGiR Rectifier
INSULATEDGATEBIPOLARTRANSISTOR
PD - 9157413
IRG4PH50U
Ultra Fast Speed IGBT
Features
. UItraFast: Optimized for high operating
frequencies up to 40 kHz in hard switching,
>200 kHz in resonant mode
I New IGBT design provides tighter
parameter distribution and higher efficiency than
previous generations
. Optimized for power conversion; SMPS, UPS
and welding
VCES = 1200V
VCE(on) typ. = 2.78V
E @VGE = 15V, k: = 24A
n-channel
. Industry standard TO-247AC package
Benefits
. Higher switching frequency capability than
competitive IGBTs
. Highest efficiency available
. Much lower conduction losses than MOSFETs
. More efhcient than short circuit rated IGBTs
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 1200 V
k: @ Tc = 25°C Continuous Collector Current 45
k: @ Tc = 100°C Continuous Collector Current 24 A
ICM Pulsed Collector Current C) 180
ILM Clamped Inductive Load Current © 180
VGE Gate-to-Emitter Voltage i 20 V
EARV Reverse Voltage Avalanche Energy © 170 mJ
PD @ Tc = 25°C Maximum Power Dissipation 200 W
PD © Tc = 100°C Maximum Power Dissipation 78
To Operating Junction and -55 to + 150
TSTG Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1 Atom)
Thermal Resistance
Parameter Typ. Max. Units
Rac Junction-to-Case - O.64
Rocs Case-to-Sink, Flat, Greased Surface 0.24 - "C/W
ReJA Junction-to-Ambient, typical socket mount - 40
Wt Weight 6 (0.21) - g (oz)
1
01/14/02
IRG4PH50U l:itiirgiitig,l
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi Breakdown Voltage 1200 - - V VGE = 0V, k: = 250pA
V(BR)ECS Emitter-to-Collector Breakdown Voltage © 18 - - V VGE = 0V, lc = 1.0A
AV(BR)CESIATJ Temperature Coeff. of Breakdown Voltage - 1.20 - V/°C VGE = 0V, Ic = 1.0mA
- 2.56 3.5 Ic = 20A
VCE(ON) Collector-to-Emi) Saturation Voltage - 2.78 3.7 V Ic = 24A VGE = 75V
- 3.20 - Ic = 45A See Fig.2, 5
- 2.54 - lc = 24A , To = 150°C
VGE(th) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, lc = 250pA
AVGE(m)/ATJ Temperature Coeff. of Threshold Voltage - -13 - mV/°C VCE = VGE, Ic = 250pA
We Forward Transconductanoe © 23 35 - S VCE = 100V, k: = 24A
- - 250 VGE = 0V, VCE = 1200V
ICES Zero Gate Voltage Collector Current - - 2.0 pA I/ss = 0V, VCE = 24V, To = 25°C
- - 5000 VGE = 0V, VCE = 1200V, Tu = 150°C
IGES GatetoEmitter Leakage Current - - i100 nA VGE = t20V
Switching Characteristics © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) - 160 250 k: = 24A
Qge Gate - Emitter Charge (turn-on) - 27 40 n0 Vcc = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) - 53 83 VGE = 15V
tum”) Turn-On Delay Time - 35 -
tr Rise Time - 15 - ns Tu = 25°C
1mm Turn-Off Delay Time - 200 350 Ic = 24A, Vcc = 960V
tr Fall Time - 290 500 VGE = 15V, Rs = 5.09
Eon Turn-On Switching Loss - 0.53 - Energy losses include "tail"
Eoff Turn-Off Switching Loss - 1.41 - mJ See Fig. 9, 10, 14
ES Total Switching Loss - 1.94 2.6
tdmn) Turn-On Delay Time - 31 - T: = 150°C
t, Rise Time - 18 - ns Ic = 24A, Vcc = 960V
tam) Turn-Off Delay Time - 320 - VGE = 15V, Rs = 5.09
tr Fall Time - 280 - Energy losses include "tail"
Ets Total Switching Loss - 5.40 - mJ See Fig. 11, 14
Eon Turn-On Switching Loss - 0.35 - To = 25°C, VGE = 15V, Rs = 5.09
Eoff Turn-Off Switching Loss - 1.43 - m J IC = 20A, Vcc = 960V
. . - 1.78 2.9 Ener losses include "tail"
G Total Switching Loss - 4.56 - See giyg. 9, 10, 11, 14, T J = 150°C
Ls Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 3600 - VGE = 0V
Coes Output Capacitance - 160 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 31 - f = 1.0MHz
Notes:
co Repetitive rating; VGE= 20V, pulse width limited by © Repetitive rating; pulse width limited by maximum
max. junction temperature. ( See fig. 13b ) junction temperature.
© Vcc = 80%(VcEs), VGE = 20V, L = 10pH, RG = 5.09, © Pulse width s 80ps; duty factor s: 0.1%.
(See Rr 13a) co Pulse width 5.0ps, single shot.
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