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IRG4PH50UDPBFIRN/a4avai1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package


IRG4PH50UDPBF ,1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC packageFeatures• UltraFast: Optimized for high operatingV = 1200VCES frequencies up to 40 kHz in hard s ..
IRG4PSC71K ,600V UltraFast 8-25 kHz Discrete IGBT in a TO-274AA packageFeaturesV = 600VCES• Hole-less clip/pressure mount package compatible with TO-247 and TO-264, w ..
IRG4PSC71KD ,600V UltraFast 8-25 kHz Copack IGBT in a TO-274AA packageFeaturesV = 600V• Hole-less clip/pressure mount package compatibleCES with TO-247 and TO-264, w ..
IRG4PSC71U ,600V UltraFast 8-60 kHz Discrete IGBT in a TO-274AA packageFeatures C• UltraFast switching speed optimized for operatingV = 600VCES frequencies 8 to 40kHz ..
IRG4PSH71K ,1200V UltraFast 4-20 kHz Discrete IGBT in a TO-274AA packageFeaturesV = 1200VCES• Hole-less clip/pressure mount package compatible with TO-247 and TO-264, ..
IRG4PSH71KD ,1200V UltraFast 4-20 kHz Copack IGBT in a TO-274AA packageFeaturesV = 1200V• Hole-less clip/pressure mount package compatibleCES with TO-247 and TO-264, ..
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IRG4PH50UDPBF
1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package
PD -95190
International
TOR Rectifier llRG4PH50UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH UItraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features c
. UltraFast: Optimized for high operating VCES = 1200V
frequencies up to 40 kHz in hard switching,
>200 kHz in resonant mode
. New IGBT design provides tighter
parameter distribution and higher efficiency than
previous generations
. IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in n I h a n n el
bridge configurations
E @VGE =15V, Ic = 24A
. Industry standard TO-247AC package
. Lead-Free , ’\
Benefits
. Higher switching frequency capability than 1i)gisiiii;
competitive IGBTs Q
. Highest efficiency available
. HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing TO-247PC
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 1200 V
Ic @ To = 25°C Continuous Collector Current 45
lo @ To = 100°C Continuous Collector Current 24 A
ICM Pulsed Collector Current (D 180
ILM Clamped Inductive Load Current © 180
IF @ To = 100°C Diode Continuous Forward Current 16
IFM Diode Maximum Forward Current 180
VGE Gate-to-Emitter Voltage t 20 V
PD @ To = 25°C Maximum Power Dissipation 200 W
PD @ To = 100°C Maximum Power Dissipation 78
Tu Operating Junction and -55 to + 150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
Mounting torque, 6-32 or M3 screw. 10 lbf-in (1.1N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
ReJC Junction-to-Case - IGBT - - 0.64
ROJC Junction-to-Case - Diode - - 0.83 °C/W
Recs Case-to-Sink, flat, greased surface - 0.24 -
RQJA Junction-to-Ambient, typical socket mount - - 40
Wt Weight - 6 (0.21) - g (oz)
1
04/26/04

International
IRG4PH50UDPbF :recmRectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltages 1200 - - V Vas = 0V, IC = 250PA
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Voltage - 1.20 - V/°C Vee = 0V, k: = 1.0mA
Vow") Collector-to-Emitter Saturation Voltage - 2.56 3.5 Ic = 20A VGE = 15V
- 2.78 3.7 lc = 24A
- 3.20 - V Ic = 45A See Fig. 2, 5
- 2.54 - k: = 24A, Tu = 150°C
VGE(th) Gate Threshold Voltage 3.0 - 6.0 VCE = I/ss, k; = 250PA
AVGE(m)/ATJ Temperature Coeff. of Threshold Voltage - -13 - mV/°C VCE = Vas, k: = 250pA
gfe Forward Transconductance Ci) 23 35 - S VCE = 100V, k: = 24A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = 0V, VCE = 1200V
- - 6500 VGE = 0V, VCE = 1200V, To = 150°C
VFM Diode Forward Voltage Drop - 2.5 3.5 V lc = 16A See Fig. 13
- 2.1 3.0 k; = 16A, Tu =150°C
IGES Gate-to-Emitter Leakage Current - - t100 nA Vss = t20V
Switching Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (turn-on) - 160 250 IC = 24A
Qge Gate - Emitter Charge (turn-on) - 27 40 nC Vcc = 400V See Fig. 8
090 Gate - Collector Charge (turn-on) - 53 80 VGE = 15V
td(on) Turn-On Delay Time - 47 - Tu = 25°C
t, Rise Time - 24 - ns k: = 24A, Vcc = 800V
td(off) Turn-Off Delay Time - 110 170 Vee = 15V, Re = 5.09
tf Fall Time - 180 260 Energy losses include "tail" and
Eon Turn-On Switching Loss - 2.10 - diode reverse recovery.
Eott Turn-Off Switching Loss - 1.50 - mJ See Fig. 9, IO, 18
G Total Switching Loss - 3.60 4.6
tdwn) Turn-On Delay Time - 46 Tu = 150°C, See Fig. 11, 18
t, Rise Time - 27 - ns Ic = 24A, Vcc = 800V
tum) Turn-Off Delay Time - 240 - VGE = 15V, Ra = 5.09
tf Fall Time - 330 - Energy losses include "tail" and
Ets Total Switching Loss - 6.38 - mJ diode reverse recovery.
Ls Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 3600 - Vas = 0V
Goes Output Capacitance - 160 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 31 - f = 1.0MHz
trr Diode Reverse Recovery Time - 90 135 ns TJ = 25°C See Fig.
- 164 245 TJ = 125°C 14 IF = 16A
Ir, Diode Peak Reverse Recovery Current - 5.8 10 A Tu = 25°C See Fig.
- 8.3 15 Tu = 125°C 15 VR = 200V
Q,, Diode Reverse Recovery Charge - 260 675 nC Tu = 25°C See Fig.
- 680 1838 Tu = 125°C 16 di/dt = 200A/us
di(rec)M/dt Diode Peak Rate of Fall of Recovery - 120 - Alps TJ = 25°C See Fig.
During tb - 76 - Tu = 125°C 17
2

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