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IRG4PSH71KDPBFIRN/a221avai1200V UltraFast 4-20 kHz Copack IGBT in a TO-274AA package


IRG4PSH71KDPBF ,1200V UltraFast 4-20 kHz Copack IGBT in a TO-274AA packageFeatures . Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinfo ..
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IRG4PSH71KDPBF
1200V UltraFast 4-20 kHz Copack IGBT in a TO-274AA package
International
:raRIectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
PD- 95910
IRG4PSH7'1KDPbF
Short Circuit Rated
UltraFast IGBT
Features
. HoIe-Iess clip/pressure mount package compatible
with TO-247 and TO-264, with reinforced pins
. High short circuit rating IGBTs, optimized for
motorControl
. Minimum switching losses combined with low
conduction losses
. Tightest parameter distribution
. IGBT co-packaged with ultrafast soft recovery
f VCES = 1200V
ls. VCE(on)typ. = 2.97V
E @VGE=15V, Io: 42A
n-channel
antiparallel diode
. Creepage distance increased to 5.35mm
. Lead-Free
Benefits
. Highest current rating copack IGBT
- Maximum power density, twice the power
handling of the TCY-MT, less space than TC)-264
. HEXFREDTM diode optimized for operation with
IGBT, to minimize EMI, noise and switching losses
Absolute Maximum Ratings SUPER - 247
Parameter Max. Units
I/css Collector-to-Emitter Voltage 1200 V
Ic (P TC = 25''C Continuous Collector Current 78
lg tp Tc =100°C Continuous Collector Current 42
ICM Pulsed Collector Current (O 156 A
ILM Clamped Inductive Load Current © 156
IF Q) Tc =100''C Diode Continuous Forward Current 42
IFM Diode Maximum Forward Current 156
tsc Short Circuit Withstand Time 10 us
l/ss Gate-to-Emilie, Voltage 1 20 V
Po Cl Tc = 25''C Maximum Power Dissipation 350
PD tp To = 100°C Maximum Power Dissipation 140
Tu Operating Junction and -55 to +150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Thermal Resistance\ Mechanical
Parameter Min Typ. Max. Units
RQJC Junction-to-Case - IGBT - - 0.35
ReJC Junction-to-Case - Diode - - 0.69 °C/W
Recs Case-to-Sink, flat, greased surface - 0.24 -
ReJA Junction-to-Ambient, typical socket mount - - 38
Recommended Clip Force 20.0(2.0) - - N (kgf)
Weight - 6 (0.21) - g (oz)
1
09/20/04

IRG4PSH71KDPbF International
TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BmEs Cdlector-toEmitter Breakdown Voltages} 1200 - - V Veg = OV, k: = 250pA
AVERJCEs/ATJ Temperature Coeff. ct Breakdown Voltage - 1.1 - l/fC Veg = OV, lc = 10mA
VCEWJ Collector-to-Emi" Saturation Voltage - 2.97 3.9 lg = 42A VGE = 15V
- 3.44 - V lc = 76A See Fig. 2.5
- 2.60 - lc = 42A. Tu = 150°C
VGEmm Gate Threshold Voltage 3.0 - 6.0 l/ce = Veg. lc = 250uA
AVsso/AT: Temperature Coeff, of Threshold Voltage - -12 - mV/°C VCE = Veg. lc = 1.5mA
gre Forward Transconductance 6) 25 38 - S I/cs = 50V, Ic = 42A
ICES Zero Gate Voltage Collector Current - - 500 PA l/ss = OV, VCE = 1200V
- - 10 mA Vss = 0V, VCE = 1200V, T: = 150°C
VFM Diode Forward Voltage Drop - 2.5 3.7 V IQ = 42A See Fig. 13
- 2.4 - lg = 42A, Tu = 150°C
legs Gate-toEmitter Leakage Current - - 1100 nA Veg = t20V
Switching Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
09 Total Gate Charge (turn-on) - 410 610 lc = 42A
Qge Gate - Emitter Charge (turn-on) - 47 70 nC Vcc = 400V See Fig.8
Qy, Gate - Collector Charge (turn-on) - 145 220 We = 15V
td(on1 Turn-On Delay Time - 67 -
tr Rise Time - 84 - ns T: = 25°C
tam) Turn-Off Delay Time - 230 350 k: = 42A. Vcc = 800V
t, Fall Time - 130 190 We =15V, Rs = 5.09
Eon Turn-On Switching Loss - 5.68 - Energy losses include "tail"
Em Turn-Off Switching Loss - 3.23 - ml and diode reverse recovery
Ets Total Switching Loss - 8.90 11.6 See Fig. 9,10,18
ts: Short Circuit Withstand Time 10 - - us Vcc = 720V. T: = 125°C
I/ss =15V, Rs = 5.09
tdwn) Turn-On Delay Time - 65 - T: = 150°C. See Fig. 11.18
tr Rise Time - 87 - ns lc = 42A. Vcc = 800V
td(off) Turn-Off Delay Time - 370 - Veg = 15V. Rs = 5.09
tr Fall Time - 290 - Energy losses include "tail"
Ee Total Switching Loss - 13.7 - mJ and diode reverse recovery
Ls Internal Emitter Inductance - 13 - nH Measured 5mm from package
C'eg Input Capacitance - 5770 - Veg = 0V
Cos, Output Capacitance - 400 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 100 - f = 1.0MHz
trr Diode Reverse Recovery Time - 107 160 ns T: = 25°C See Fig.
- 160 240 Tc-- 125°C 14 IF: 42A
l, Diode Peak Reverse Recovery Current - 10 15 A T: = 25°C See Fig.
- 16 24 T: = 125°C 15 VR = 200V
Q, Diode Reverse Recovery Charge - 680 1020 nC T: = 25°C See Fig.
- 1400 2100 Tc-- 125°C 16 di/dt = 200A/ps
di(rec)M/dt Diode Peak Rate of Fall of Recovery - 250 - Alps T: = 25°C See Fig.
During l, - 320 - T: = 125°C 17
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