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IRGB440U
500V Discrete IGBT in a TO-220AB package
International
Rectifier
PD - 9.782A
IRGB440U
INSULATED GATE BIPOLAR TRANSISTOR
Features
. Switching-Ioss rating includes all "tail" losses
. Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifer have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
UltraFast IGBT
VCES = 500V
VCE(sat) S 3.0V
E @VGE = 15V, lc = 22A
n-channel
current applications.
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emi) Voltage 500 V
lc @ Tc = 25°C Continuous Collector Current 40
lc @ Tc = 100°C Continuous Collector Current 22 A
ICM Pulsed Collector Current OD 80
ILM Clamped Inductive Load Current © 80
VGE Gate-to-Emitter Voltage t20 V
EARV Reverse Voltage Avalanche Energy © 15 mJ
PD @ Tc = 25°C Maximum Power Dissipation 160 W
Po @ Tc = 100°C Maximum Power Dissipation 65
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Min Typ. Max. Units
Rch Junction-to-Case - - 0.77
Recs Case-to-Sink, flat, greased surface - 0.50 - °CNV
ReJA Junction-to-Ambient, typical socket mount - - 80
Wt Weight - 2.0 (0.07) - g (oz)
Revision 0
IRGB440U TOR
Electrical Characteristics @ I, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi) Breakdown Voltage 500 - - V I/ss = 0V, Ic = 250PA
V(BR)ECS Emitter-ttrc-or Breakdown Voltage Cw) 20 - - V VGE = 0V, lc = 1.0A
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.35 - V/°C VGE = 0V, lc = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage - 2.4 3.0 lc = 22A VGE = 15V
- 2.8 - V Ic = 40A See Fig. 2, 5
- 2.4 - Ic = 22A, T: = 150°C
VGath) Gate Threshold Voltage 3.0 - 5.5 VCE = VGE, lc = 250pA
AVGE(th)/ATJ Temperature Coeff. of Threshold Voltage - -11 - mV/°C VCE = VGE. k: = 250PA
gfe Forward Transconductance © 6.6 13 - S VCE = 100V, lc = 22A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = 0V, VCE = 500V
- - 1000 VGE = 0V, VCE = 500V, Tu = 150°C
IGES Gate-to-Emitter Leakage Current - - A100 nA VGE = t20V
Switching Characteristics @ ll = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (tum-on) - 55 83 lc = 22A
Qge Gate - Emitter Charge (turn-on) - 11 17 nC Vcc = 400V See Fig. 8
090 Gate - Collector Charge (turn-on) - 19 29 VGE = 15V
tam) Tum-On Delay Time - 27 - TJ = 25°C
tr Rise Time - 13 - ns k: = 22A, Vcc = 400V
tu(ott) Tum-Off Delay Time - 100 150 VGE = 15V, Rs = lon
tf Fall Time - 56 100 Energy losses include "tail"
Eon Turn-On Switching Loss - 0.37 -
Eoff Turn-Off Switching Loss - 0.18 - mJ See Fig. 9, 10, 11, 14
Ets Total Switching Loss - 0.55 0.70
tam) Tum-On Delay Time - 27 - TJ = 150°C,
tr Rise Time - 15 - ns lc = 22A, Vcc = 400V
tam) Tum-Off Delay Time - 137 - VGE = 15V, RG = lon
tf Fall Time - 100 - Energy losses include "tail"
Ets Total Switching Loss - 0.96 - mJ See Fig. 10, 14
Ls Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 1400 - VGE = 0V
Cues Output Capacitance - 250 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 42 - f = 1.0MHz
Notes:
OD Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
© I/cc-Moo/ll/css), Vss=20V, L=10pH,
RG=1OQ, (See fig. 13a)
(3 Repetitive rating; pulse width limited
by maximum junction temperature.
© Pulse width S 80ps; duty factor 5 0.1%.
S Pulse width 5.0ps,
single shot.
