IRGBF20F ,900V Discrete IGBT in a TO-220AB packageapplications.TO-220ABAbsolute Maximum Ratings Parameter Max. UnitsV Collector-to-Emitt ..
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IRGBF20F
900V Discrete IGBT in a TO-220AB package
International
Rectifier
PD - 9.776A
IRGBF20F
INSULATED GATE BIPOLAR TRANSISTOR
Features
I Switching-loss rating includes all "tail" losses
. Optimized for medium operating frequency ( 1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectiher have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
Fast Speed IGBT
VCES = 900V
VCE(sat) S 4.3V
E @VGE = 15V, lc = 5.3A
n-channel
current applications.
TO-220AE
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emi) Voltage 900 V
Ic @ Tc = 25°C Continuous Collector Current 9.0
Ic @ Tc = 100°C Continuous Collector Current 5.3 A
ICM Pulsed Collector Current (D 18
ILM Clamped Inductive Load Current © 18
V35 Gate-to-Emitter Voltage t20 V
EARV Reverse Voltage Avalanche Energy © 5.0 mJ
Po @ To = 25°C Maximum Power Dissipation 60 W
PD @ TC = 100°C Maximum Power Dissipation 24
Tu Operating Junction and -55 to +150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Min Typ. Max. Units
ReJC Junction-to-Case - - 2.1
Recs Case-to-Sink, flat, greased surface - 0.50 - "CII/V
ReJA Junction-to-Ambient, typical socket mount - - 80
Wt Weight - 2.0 (0.07) - g (oz)
Revision 0
IRGBF20F TOR
Electrical Characteristics @ ll = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi) Breakdown Voltage 900 - - V VGE = 0V, lc = 250pA
V(BR)ECS Emitter-tocolledor Breakdown Voltage (CO 20 - - V VGE = 0V, lc = 1.0A
AV(BR)CESIATJ Temperature 0081f. of Breakdown Voltage - 0.85 - V/°C VGE = 0V, Ic = 1.0mA
VCE(on) Collector-to-emitter Saturation Voltage - 2.9 4.3 Ic = 5.3A VGE = 15V
- 3.5 - V Ic = 9.0A See Fig. 2, 5
- 3.5 - Ic = 5.3A, To = 150°C
VGE(th) Gate Threshold Voltage 3.0 - 5.5 VCE = VGE, lc = 250pA
AN/GEO/ATO Temperature Coeff. of Threshold Voltage - -10 - mW'C VCE = VGE, Ic = 250pA
gfe Forward Transconductance © 0.9 1.5 - S VCE = 100V, lc = 5.3A
logs Zero Gate Voltage Collector Current - - 250 pA VGE = 0V, VCE = 900V
- - 1000 VGE = 0V, VCE = 900V, Tu = 150°C
IGES Gate-to-Emitler Leakage Current - - i100 nA VGE = i20V
Switching Characteristics @ T, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (tum-on) - 11 17 lc = 5.3A
Qge Gate - Emitter Charge (turn-on) - 2.6 3.9 nC Vcc = 400V See Fig. 8
Qgc Gate - Collector Charge (tum-on) - 4.6 6.9 VGE = 15V
tam) Tum-On Delay Time - 29 - To = 25°C
tr Rise Time - 12 - ns Ic = 5.3A, Vcc = 720V
td(off) Tum-Off Delay Time - 170 300 VGE = 15V, Rs = 50n
tf Fall Time - 120 280 Energy losses include "tail"
Eon Turn-On Switching Loss - 0.25 -
Eoff Turn-Off Switching Loss - 0.36 - mJ See Fig. 9, 10, 11, 14
Ets Total Switching Loss - 0.61 1.10
tum”) Turn-On Delay Time - 27 - To = 150°C,
tr Rise Time - 13 - ns IC = 5.3A, Vcc = 720V
tum“) Tum-Off Delay Time - 270 - l/SE = 15V, Rs = 50n
tf Fall Time - 240 - Energy losses include "tail"
Ets Total Switching Loss - 1.10 - mJ See Fig. 10, 14
LE Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 220 - VGE = 0V
Coes Output Capacitance - 25 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 3.4 - f = 1.0MHz
Notes:
co Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
(See fig. 13b)
© Vcc=80%(VcEs), VGE=20V, L=10pH,
Rc-- 509, (See fig. 13a)
© Repetitive rating; pulse width limited
by maximum junction temperature.
6) Pulse width 5.0ps,
single shot.
© Pulse width s 80ps; duty factor s: 0.1%.
