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IRGP420U
500V Discrete IGBT in a TO-3P (TO-247AC) package
Ilnternational
Rectifier
PD - 9.781
IRGP420U
INSULATED GATE BIPOLAR TRANSISTOR
Features
. Switching-Ioss rating includes all "tail" losses
. Optimized for high operating frequency (over
See Fig. 1 for Current vs. Frequency
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier
have higher usable current densities than comparable bipolar transistors,
UltraFast IGBT
n-channel
VCES = 500V
VCE(sat) f 3.0V
@VGE =15V,lc = 7.5A
while at the same time having simpler gate-drive requirements of the m
familiar power MOSFET. They provide substantial benefits to a host of
high-voltage, high-current applications. ////
TO -2 4 7 A C
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 500 V
Ic @ Tc = 25''C Continuous Collector Current 14
lc @ Tc = 100°C Continuous Collector Current 7.5 A
ICM Pulsed Collector Current OD 28
ILM Clamped Inductive Load Current © 28
l/GE Gate-to-Emitter Voltage I20 V
EARV Reverse Voltage Avalanche Energy © 5.0 m]
Po @ Tc = 25°C Maximum Power Dissipation 60 W
PD @ TC = 100°C Maximum Power Dissipation 24
T: Operating Junction and -55 to +150
TSTG Storage Temperature Range (
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Min. Typ. Max Units
RGJC Junction-to-Case ------------ 2.1
Recs Case-to-Sink, flat, greased surface - 0.24 - "CM/
RQJA Junction-to-Ambient, typical socket mount ———————————— 40
Wt Weight - 6 (0.21) - 9 (oz)
IRGP420U
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 500 - - V VGE = 0V, Ic = 250pA
V(BR)ECS Emitter-to-Collector Breakdown Voltage i) 20 ---- - V VGE = 0V, IC = 1.0A
AV(BR)CES/ATJ Temperature Coeff. of Breakdown Volta e---- 0.47 ---- V/°C VGE = 0V, lc = 1.0mA
Vcaon) Collector-to-Emitter Saturation Voltage ---- 2.4 3.0 lc = 7.5A VGE = 15V
---- 3.1 ---- V Ic = 14A See Fig. 2, 5
- 2.7 - Ic = 7.5A, TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 - 5.5 VCE = VGE, IC = 250PA
AVGE(th)/ATJ Temperature Coeff. of Threshold Voltage ---- -10 ---- mV/°C VCE = VGE, Ic = 250PA
gfe Forward Transconductance s 1.2 2.0 - S VCE = 100V, Ic = 7.5A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = 0V, VCE = 500V
- - 1000 VGE = 0V, VCE = 500V, TJ = 150°C
Kass Gate-to-Emitter Leakage Current ---- - i100 nA VGE = 120V
Switching Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (turn-on) ---- 15 23 k: = 7.5A
Qge Gate - Emitter Charge (turn-on) ---- 3.7 5.6 nC Vcc = 400V See Fig. 8
(U, Gate - Collector Charge (turn-on) ---- 6.5 9.8 V35 = 15V
td(on) Turn-On Delay Time ---- 28 - TJ = 25°C
t, Rise Time ---- 11 ---- ns Ic = 7.5A, Vcc = 400V
tsom Turn-Off Delay Time ---- 72 110 VGE = 15V, Rs = 509
tf FalITime - 96 140 Energy losses include "tail"
Ed, Turn-On Switching Loss ---- 0.13 ----
Eoff Turn-Off Switching Loss - 0.08 - rnJ See Fig. 9, 10, 11, 14
ES Total Switching Loss - 0.21 0.28
tdmn) Turn-On Delay Time - 26 ---- T, = 150°C,
tr Rise Time ---- 12 ---- ns Ic = 7.5A, Vcc = 400V
td(0ff) Turn-Off Delay Time ---- 120 ---- VGE = 15V, Rs = 509
tr FaIITime - 140 - Energy losses include "tail"
Ets Total Switching Loss - 0.35 - mJ See Fig. IO, 14
LE Internal Emitter Inductance tpt.-- 13 - nH Measured 5mm from package
Cies Input Capacitance - 330 - VGE = 0V
Goes Output Capacitance - 47 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 5.9 - f = 1.0MHz
Notes:
oo Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
(See ftg. 13b)
C) Vcc=80%(VcEs), VGE=20V, L=10pH,
Re: 509, (See fig. 13a )
© Repetitive rating; pulse width limited
by maximum junction temperature.
(9 Pulse width 5.0ps,
single shot.
co Pulse width S 80ps; duty factor f 0.1%.
