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IRGPC30UIR N/a1175avai600V Discrete IGBT in a TO-3P (TO-247AC) package


IRGPC30U ,600V Discrete IGBT in a TO-3P (TO-247AC) packageapplications.Absolute Maximum Ratings Parameter Max. UnitsV Collector-to-Emitter Volta ..
IRGPC30UD2 ,600V Copack IGBT in a TO-3P (TO-247AC) packageapplications.TO -2 47ACAbsolute Maximum Ratings Parameter Max. UnitsV Collector-to-Emi ..
IRGPC40K ,600V Discrete IGBT in a TO-3P (TO-247AC) packageapplications requiring short circuit withstand capability.TO-247ACAbsolute Maximum Ratings ..
IRGPC40KD2 ,600V Copack IGBT in a TO-3P (TO-247AC) packageapplications requiring short circuit withstand capability.TO-247ACAbsolute Maximum Ratings ..
IRGPC40U ,600V Discrete IGBT in a TO-3P (TO-247AC) packageapplications.TO-247ACAbsolute Maximum Ratings Parameter Max. UnitsV Collector-to-Emitt ..
IRGPC40UD2 ,600V Copack IGBT in a TO-3P (TO-247AC) packageapplications.O-247ACTAbsolute Maximum Ratings Parameter Max. UnitsV Collector-to-Emitt ..
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IRGPC30U
600V Discrete IGBT in a TO-3P (TO-247AC) package
Ilnternational
Rectifier
PD - 9.1032
IRGPC30U
INSULATED GATE BIPOLAR TRANSISTOR
Features
. Switching-loss rating includes all "tail" losses
. Optimized for high operating frequency (over
See Fig. 1 for Current vs. Frequency curve
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
UltraFast IGBT
n-channel
VCES = 600V
VCE(sat) f 3.0V
@VGE =15V,lc = 12A
current applications.
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
Ic @ Tc = 25°C Continuous Collector Current 23
lc @ Tc = 100°C Continuous Collector Current 12 A
ICM Pulsed Collector Current (D 92
ILM Clamped Inductive Load Current © 92
VGE Gate-to-Emitter Voltage 120 V
EARV Reverse Voltage Avalanche Energy © 10 mJ
Po @ Tc = 25°C Maximum Power Dissipation 100 W
PD @ TC = 100°C Maximum Power Dissipation 42
To Operating Junction and -55 to +150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 lbf-in (1 .1N-m)
Thermal Resistance
Parameter Min Typ. Max. Units
RGJC Junction-to-Case - - 1.2
Recs Case-to-Sink, flat, greased surface - 0.24 - "CNV
RQJA Junction-to-Ambient, typical socket mount - - 40
Wt Weight - 6 (0.21) - g (oz)
IRGPC30U TOR
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi) Breakdown Voltage 600 - - V VGE = 0V, Ic = 250pA
V(BR)ECS Emitter-to-Collector Breakdown Voltage (Ii 20 - - V VGE = 0V, IC = 1.0A
AV(BR)CES/ATJ Temperature Coeff. of Breakdown Voltage - 0.63 - V/°C VGE = 0V, k: = 1.0mA
Vcaon) Collector-to-Emi) Saturation Voltage - 2.2 3.0 k: = 12A VGE = 15V
- 2.7 - V lc = 23A See Fig. 2, 5
- 2.4 - lc =12A,Tu = 150°C
Vsam) Gate Threshold Voltage 3.0 - 5.5 VCE = VGE, k: = 250PA
AVGE(th)/ATJ Temperature Coeff. of Threshold Voltage - -11 - mV/°C VCE = VGE, Ic = 250PA
gfe Forward Transconductance s 3.1 8.6 - S VCE = 100V, lc = 12A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = 0V, VCE = 600V
- - 1000 l/GE = 0V, VCE = 600V, TJ = 150°C
IGES Gate-to-Emitter Leakage Current - - i100 nA VGE = i20V
Switching Characteristics @ To = 25°C (unless
otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Qu Total Gate Charge (turn-on) - 29 36 Ic = 12A
Qge Gate - Emitter Charge (tum-on) - 4.8 6.8 nC Vcc = 400V See Fig. 8
Qar: Gate - Collector Charge (turn-on) - 12 17 V35 = 15V
lawn) Tum-On Delay Time - 24 - Tu = 25''C
tr Rise Time - 15 - ns IC = 12A, Vcc = 480V
tdrom Tum-Off Delay Time - 92 200 VGE = 15V, Rs = 239
tr Fall Time - 93 190 Energy losses include "tail"
Ed, Tum-On Switching Loss - 0.18 -
Eoff Tum-Off Switching Loss - 0.35 - mJ See Fig. 9, 10, 11, 14
ES Total Switching Loss - 0.53 1.0
td(on) Tum-On Delay Time - 24 - TJ = 150°C,
tr Rise Time - 15 - ns e = 12A, Vcc = 480V
tdist) Tum-Off Delay Time - 160 - VGE = 15V, Rs = 239
tr Fall Time - 200 - Energy losses include "tail"
Ets Total Switching Loss - 0.90 - mJ See Fig. 10, 14
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 660 - VGE = 0V
Coes Output Capacitance - 100 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 11 - f = 1.0MHz
Notes:
oo Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
( See Fig. 13b )
C) Vcc=80%(VcEs), VsE=20V, L=10pH,
Re: 239, ( See fig. 13a )
© Repetitive rating; pulse width limited
by maximum junction temperature.
(9 Pulse width 5.0ps,
single shot.
co Pulse width s: 80ps; duty factor S 0.1%.
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