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IRGS8B60KIRN/a4800avai600V UltraFast 10-30 kHz Copack IGBT in a D2-Pak package


IRGS8B60K ,600V UltraFast 10-30 kHz Copack IGBT in a D2-Pak packageFeaturesV = 600VCES• Low VCE (on) Non Punch Through IGBT Technology.• 10µs Short Circuit Capability ..
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IRGS8B60K
600V UltraFast 10-30 kHz Copack IGBT in a TO-220AB package
PD - 94545C
IRGB8B60K
IRGS8B60K
IRGSL8B60K
vCES = 600V
International
Tart, Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
Features C
. Low VCE (on) Non Punch Through IGBT Technology.
. 10ps Short Circuit Capability.
. Square RBSOA.
. Positive VCE (on) Temperature Coefficient. G
k: = 20A, Tc=100oC
tsc>10us, T J=150°C
n-channel VCE(on) typ. = 1.8V
Benefits
. Benchmark Efficiency for Motor Control.
. Rugged Transient Performance.
. Low EMI.
. Excellent Current Sharing in Parallel Operation.
TO-220AB D2Pak TO-262
IRGB8B60K IfRGS8B60K |RGSL8B60K
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
Ic @ Tc = 25°C Continuous Collector Current 28
Ic @ Tc = 100°C Continuous Collector Current 19 A
ICM Pulse Collector Current (Ref.Fig.C.T.5) 56
ILM Clamped Inductive Load current (D 56
Vas Gate-to-Emitter Voltage t20 V
PD © Tc = 25°C Maximum Power Dissipation 167 W
PD © To = 100°C Maximum Power Dissipation 83
T J Operating Junction and -55 to +175
Tsrs Storage Temperature Range °C
Storage Temperature Range, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Thermal l Mechanical Characteristics
Parameter Min. Typ. Max. Units
Rm Junction-to-Case- IGBT - - 0.90
R005 Case-to-Sink, flat, greased surface - 0.50 - 'CDN
ROJA Junction-to-Ambient, typical socket mount © _ - 62
ROJA Junction-to-Ambient (PCB Mount, Steady State)© -- -- 40
Weight - 1.44 - g
1
10/16/03
IRGB/S/SL8B60K
International
122R Rectifier
Electrical Characteristics @ T,, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions ReLFig.
V(Bmgs Collector-to-Emitter Breakdown Voltage 600 - - V Vss = 0V, IC = 500PA
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.57 - V/°C l/ss = 0V, Ic = 1mA (25°C-150°C)
VCE(on) Collector-to-Emitter Voltage - 1.8 2.2 IC = 8.0A, VGE = 15V, TJ = 25°C 5,6,7
- 2.2 2.5 V k; = 8.0A, l/se =15V,TJ = 150°C 8,9,10
- 2.3 2.6 IC = 8.0A, Vas =15V,TJ = 175°C
VGEW, Gate Threshold Voltage 3.5 4.5 5.5 VCE = Vas, Ic = 250pA 8,9,10,
AVGEuh/ATJ Threshold Voltage temp. coefficient - -9.5 - mV/°C VCE = VGE, Ic = 1mA (25°C-125°C) 11
gfe Forward Transconductance - 3.7 - S VCE = 50V, Ic = 8.0A, PW = 80ps
ICES Zero Gate Voltage Collector Current - 1.0 150 VGE = 0V, VCE = 600V
- 200 500 pA Vss = 0V, l/cs = 600V, TJ = 150°C
- 800 1320 Vas = 0V, l/cs = 600V, T, = 175°C
lees Gate-to-Emitter Leakage Current - - 1100 nA Vas = t201/
Switching Characteristics © T,, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions RelFig.
q, Total Gate Charge (turn-on) - 29 - Ic = 8.0A 17
Qge Gate-to-Emitter Charge (turn-on) - 3.7 - nC Vcc = 480V CT1
Qgc Gate-to-Collector Charge (turn-on) - 14 - VGE = 15V
E0n Turn-On Switching Loss - 160 268 Ic = 8.0A, Vcc = 400V CT4
Es, Turn-Off Switching Loss - 160 268 pJ l/ss = 15V, Rs = 509, L = 1.1mH
Em Total Switching Loss - 320 433 T J = 25°C ©
tam) Turn-On delay time - 23 27 Ic = 8.0A, Vcc = 400V
t, Rise time - 22 26 ns l/ss = 15V, Rs = 509, L = 1.1mH CT4
tam) Turn-Ott delay time - 140 150 T: = 25°C
tr Fall time - 32 42
Eo,, Turn-On Switching Loss - 220 330 lc = 8.0A, Vcc = 400V CT4
Est Turn-Off Switching Loss - 270 381 pJ I/se = 15V, Ra = 509, L = 1.1mH 12,14
Em. Total Switching Loss - 490 608 T, = 150°C (9 WF1,WF2
tum) Turn-On delay time - 22 27 lo = 8.0A, Vcc = 400V 13,15
t, Rise time - 21 25 ns l/se = 15V, Rs = 509, L = 1.1mH CT4
tam“) Turn-Off delay time - 180 198 T, = 150°C WF1
t, Fall time - 40 56 WF2
Cies Input Capacitance - 440 - VGE = 0V
cu, Output Capacitance - 38 - pF Vcc = 30V 16
Cres Reverse Transfer Capacitance - 16 - = 1.0MHz
RBSOA Reverse Bias Safe Operating Area FULL SQUARE T, = 150°C, Ic = 34A, Vp = 600V 4
Vcc=500V,VGE = +15V to 0V,RG = 509 CT2
TJ = 150°C, Vp = 600V, Rs = 1009 CT3
SCSOA Short Circuit Safe Operating Area 10 - - ps Vcc=360V,Vas = +15V to 0V WF3
Notes co to © are on page 13.

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