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IRL3102SIRN/a100avai20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
IRL3102STRLIRN/a11600avai20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package


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IRL3102S-IRL3102STRL
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
PD 9.1691A
IRL3102S
International
I523 Rectifier PRELIMINARY
HEXFET® Power MOSFET
o Advanced Process Technology D
0 Surface Mount VDSS = 20V
o Optimized for 4.5V-7.0V Gate Drive
o Ideal for CPU Core DC-DC Converters -
0 Fast Switching G Rros(on) 0.013w
I = 61A
Description
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters. Advanced processing techniques
combined with an optimized gate oxide design results
in a die sized specifically to offer maximum efficiency
at minimum cost.
The D2Pak is a surface mount power package capable
of accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because
of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface mount
application.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, l/ss @ 4.5V6) 61
ID @ To = 100°C Continuous Drain Current, VGs @ 4.5V© 39 A
IDM Pulsed Drain Current coco 240
PD @Tc = 25°C Power Dissipation 89 W
Linear Derating Factor 0.71 W/°C
VGS Gate-to-Source Voltage i 10 V
fie Single Pulse Avalanche Energy©6) 220 ml
IAR Avalanche CurrentCD 35 A
EAR Repetitive Avalanche Energy© 8.9 mJ
dv/dt Peak Diode Recovery dv/dt ako 5.0 V/ns
Tu Operating Junction and -55 to + 150
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Ric Junction-to-Case - 1.4
RVA Junction-to-Ambient ( PCB Mounted,steady-state)** - 40 °CNV

9/16/97
IRL31028 International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 - - V N/ss = 0V, ID = 250pA
DV(BR)Dss/DTJ Breakdown Voltage Temp. CoefMient - 0.016 - V/°C Reference to 25°C, ID = ImA6)
. . . - - 0.015 VGS = 4.5V, ID = 37A (4)
RDS(on) Static Drain-to-Source On-Resistance - - 0.013 W VGS = 7.0V, ID = 37A CO
VGS(th) Gate Threshold Voltage 0.70 - - V 1hos = VGS, ID = 250pA
gm Forward Transconductance 36 - - S Vos = 16V, lo = 35AS
. - - 25 Vros = 20V, I/ss = 0V
loss Drain-to-Source Leakage Current - - 250 PA VDS = 10V, l/GS = OV, T J = 150°C
Gate-to-Source Forward Leakage - - 100 VGs = 10V
IGSS Gate-to-Source Reverse Leakage - - -100 nA VGS = -10V
ck, Total Gate Charge - - 58 ID = 35A
Q95 Gate-to-Source Charge - - 14 nC Vos = 16V
di Gate-to-Drain ("Miller") Charge - - 21 I/ss = 4.5V, See Fig. 6 cos
td(on) Turn-On Delay Time - 10 - VDD = 10V
tr Rise Time - 130 - ns ID = 35A
td(ott) Turn-Off Delay Time - 80 - RG = 9.0W, I/ss = 4.5V
tf FaIITime - 110 - RD = 0.28w, cos
Between lead,
LS Internal Source Inductance - 7.5 - nH .
and center of die contact
Ciss Input Capacitance - 2500 - VGs = 0V
Cogs Output Capacitance - 1000 - pF Ws = 15V
Crss Reverse Transfer Capacitance -- 360 -- f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 61 MOSFETsymbol D
(Body Diode) A showing the L,-,-)
ISM Pulsed Source Current - - 240 integral reverse G E
(Body Diode) cos p-n junction diode. s
I/sro Diode Forward Voltage - - 1.3 V T: = 25°C, Is = 37A, I/ss = 0V ©
trr Reverse Recovery Time - 59 88 ns Tu = 25°C, IF = 35A
G, Reverse Recovery Charge - 110 160 nC di/dt = 100A/ps q)6)
ibn Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by © Isa f 35A, di/dt L 100A/ps, VDD f V(BR)DSS,
max. junction temperature. TJ L 150°C
© Starting T: = 25°C, L = 0.36mH © Pulse width L 300ps; duty cycle f 2%.
RG= 25W' IAS= MA. © Uses IRL3102 data and test conditions
** When mounted on FR-4 board using minimum recommended footprint.
For recommended footprint and soldering techniques refer to application note #AN-994.

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