IRL530NSTRLPBF ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplicationsWuan-eDem.
Absolute Maximum Ratings
Parameter Max. Units
ID tp To = 25''C Contin ..
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IRL540NL ,100V Single N-Channel HEXFET Power MOSFET in a TO-262 packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
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IRL530NSTRLPBF
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package
International
TOR Rectifier
Advanced Process Technology
Surface Mount (IRL530NS)
Low-profile through-hole (IRL530NL)
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
. Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low Ort-resistance per Silicon area. ThIS
benefit combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
arewell knownfor, providesthedesignerwith anextremely
efficient and reliable device for use In a wide variety of
applications
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-d It provides the
highest power capability and the lowest possnble om
reststance In any eXlStlng surface mount package. The
PD- 95593
IRL530NSPbF
IRL530NLPbF
HEXFET© Power MOSFET
Voss =100V
RDS(on) = 0.109
s lo = 17A
D2Frak IS sum ble tor high currentappllcatlons because ot D 2 Pak To 252
its low internal connection resistance and can disspate
up to 2,0W In a typlcal surface mount application
The througrsholeverson(IRL530NL)m available forlow-
profile applications
Absolute Maximum Ratings
Parameter Max. Units
b C) TC = 25°C Continuous Drain Current, Ves Cl ION/G) 17
b C) TC = 100''C Continuous Drain Current, Vss Cl 10V(S) 12 A
IDM Pulsed Drain Current (i)(0 60
Po CT; = 25°C Power Dissipation 3.8 W
PD Clfc = 25°C Power Dissipation 79 W
Linear Derating Factor 0.53 W/°C
Vos Gate-ttA3ource Voltage i 20 V
EAS Single Pulse Avalanche EnergyOQ 150 ml
(s Avalanche CurrentG) 9.0 A
EAR Repetitive Avalanche Energy0) 7.9 m,)
dv/dt Peak Diode Recovery dv/dt OS 5.0 V/ns
T: Operating Junction and -55 to+ 175
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Rm Junction-to-Case - 1.9 D
RM JunctiarttrAmbient( PCB Mamted,steady-state)" - 40 CAN
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07/21/04
IRL530NS/LPbF International
TOR Rectifier
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BRDSS Drain-to-Source Breakdown Voltage 100 - - V Veg = ov, ID = 250pA
AV(ER)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.122 - V/''C Reference to 25''C, ID = 1mA©
- - 0.100 I/os =10V, ID = 9.0A CO
RDS(0n) Static Drain-to-Source On-Resistance - - 0.120 fl Vos = 5.0V, '0 = 9.0A Ci)
- - 0.150 Veg = 4.0V, ID = 8.0A Ci)
VGS(th) Gate Threshold Voltage 1.0 - 2.0 V I/ce = Veg. ID = 250PA
gfs Forward Transconductance 7 7 - - S Ws = 50V, ID = 9.0AS
. - - 25 Ws = 100V, Ws = 0V
bss Drain-to-Source Leakage Current - - 250 A Ws = 80V, Vos = OV, TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 nA I/cs = 16V
Gate-to-Source Reverse Leakage - - -100 I/cs = -16V
Qg Total Gate Charge - - 34 ID = 9.0A
Qgs Gate-to-Source Charge - - 4.8 nC Vos = 80V
di Gate-to-Drain ("Miller") Charge - - 20 l/ss = 5.0V, See Fig. 6 and 13 COG)
td(on) Turn-On Delay Time - 7.2 - Vcc = 50V
tr Rise Time - 53 - ns ID = 9.0A
tam) Turn-Off Delay Time - 30 - Rs = 6.09, Vss = 5.0V
t, Fall Time 26 RD = 5.59, See Fig. 10 (9G)
Ls Internal Source Inductance - 7.5 - Between lead,
nH and center of die contact
C.SS Input Capacitance - 800 - V03 = 0V
Coss Output Capacitance - 160 - pF VDg = 25V
Crss Reverse Transfer Capacitance - 90 - f = 1.0MHz, See Fig. 5©
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 17 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 60 integral reverse 0
(Body Diode) G)(S) p-n junction diode. s
I/sn Diode Forward Voltage - - 1.3 V Tu = 25T), ls = 9.OA, I/ss = 0V 3)
trr Reverse Recovery Time - 140 210 ns Tu = 25''C, IF = 9.0A
l Reverse Recovery Charge - 740 1100 nC di/dt = 100A/ps (96)
ton Forward Turn-On Time Intrinsic turn-on time is negligible (tum-on is dominated by Ls+k)
Notes:
C) Repetitive rating; pulse width limited by (r) Pulse width I 300ps; duty cycle s 2%.
max. junction temperature. ( See fig. 11 )
C) Starting Tu-- 25°C. L = 3.7mH s Uses IRL530N data and test conditions
Rs = 259. IAS = 9.0A. (See Figure 12)
(3) la, I 9.0A, di/dt s 540A/ps, l/cc E 1(swvss,
T: f 175''C
** When mounted on 1" square PCB( FR-4 or G-10 Material ).
For recommended soldering techniques refer to application note #AN-994.
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