IRL540S ,28A 100V power MOSFETInternational
TOR Rectifier
HEXFETO Power MOSFET
PD-9.910
IF1L540S
q Surface Mount
q ..
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IRL540S
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
PD-9.910
International
TOR Rectifier llRL540S
HEXFET® Power MOSFET
0 Surface Mount
0 Available in Tape & Reel D
0 Dynamic dv/dt Rating Kass = 100V
0 Repetitive Avalanche Rated
0 Logic-Level Gate Drive
0 RDs(on) Specified at VGS=4V & 5V
tt 175°C Operating Temperature
RDS(on) = 0.0779
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, tow
on-resistance and cost-effectiveness.
The SMD-220 is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The SMD-220
is suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
SMD-220
Absolute Maximum Ratings
Parameter Max. I Units
ID © To = 25°C Continuous Drain Current, Vas © 5.0 V 28
ID @ Tc = 100°C Continuous Drain Current, N/ss © 5.0 V 20 , A
IDM Pulsed Drain Current (i) 1 10
PD @ Tc = 25°C Power Dissipation 150 W
PD @ TA = 25°C Power Dissipation (PCB Mount)" 3.7
Linear Derating Factor 1.0 W PC
; Linear Derating Factor (PCB Mount)" 0.025
VGs I Gate-to-Source Voltage :10 v
EAS Single Pulse Avalanche Energy © 440 mJ
IAR Avalanche Current (i) 28 A
EAR Repetitive Avalanche Energy C) 15 md
dv/dt Peak Diode Recovery dv/dt (3 5.5 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to +175 "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rasc Junction-to-Case -.... - 1 l)
Ram Junction-to-Ambient (PCB mount)" - - 40 oC/W
Fla, Junction-to-Ambient - - 62
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
iRL540S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter _Mi.n-__ Typ. _l)/ia_x, Emit: - LrestfTf,tiop_s -
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V VGs:OV, ID: 250yA 7 i -
A/wwss/Sro Breakdown Voltage Temp. Coefficient - 0.12 - V/OC Reference to 25°C. 19: 1mA _
RDS(on) Static Drain-to-Source On-Resistance - = - 0.077 -VGS=5'OV’ b--z17A (CI)
- - 0.11 1Ves=4.0V, b=14A (4)
vesuh) Gate Threshold Voltage 7 _ _ _1.0‘ = -- 2.0 i_1/, J I/re-res, '0:25%‘.‘; -
grs Forward Transconductance I 12 IT, - 5 S 1aLsov] (y=i7A @
loss Drain-to-Source Leakage Current - - 25 yA I Vrys=100V, VGSzOV
._. ___-__ - - h - 250 VDs=80V, sz=ov, TJ=1SOOC
less Gate-to-Source Forward Leakage - :_ _1 o/il, n A 1,95%:1 0L _ a - -
Gate-to-Source Reverse Leakage - - -_100, - X§S='_10V___ - __ 2-2
09 Total Gate Charg - - 64 |D=28A
Qgs Gatejo-Eéugé- Charge = __ CT. -- 'll. nC Vos=80V
di Gate-to-Drain ("Miller") Charge - CT 27 Vssi=S0V See Fig. 6 1ni1iU1
tam) Turn-On Delay Time - 8.5 - VDD=5OV
tr Rise Time - 170 - ns |D=28A
Wolf) Turn-Off Delay Time - 35 - Rs=9.0Q
t1 Fall Time - 80 - -I RD=1.7Q See Figure m_@5_
LD Internal Drain Inductance - 4.5 - 2ch 7165: ') D\
i 7 H nH from package SQ: /
Ls Internal Source Inductance - 7.5 - Ind center of
die contact _s___
Ciss Input Capacitance - 2200 - 1/Gs--0V
.Co_s - C2rtpt_otfipy'1te, - - - ,2: As6p, =' PF Vos=25V
flrs, -__f1_e_vtys_eTranfer Capacitance - 140 - _f=1.0MHz Seeiigure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. liiax," Units Test Conditions
Is Continuous Source Current - - 28 MOSFET symbol D
(Body Diode) A showing the |__ii
ISM Pulsed Source Current - - 1 10 integral reverse (QB;
(Body Diode) (i) - p-n junction diode. s
L/yp_l0ip_t:i_iEtTher_t1L/oltai, - : 7*,” 2.5 V TJ=25°C, Is=28A, I/ss-HN ©
trr Reverse Recovery Time - 200 260 ns TJ=250C, lr=28A
er Reverse Recovery Charge - 1.7 2.9 wc di/dt=100A/pis co - - -
ton Forward Tum-On Time Intrinsic turn-on time is negngble (turn-on is dominateTbjisea)
Notes:
(i) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=25V, starting TJ=25°C, L:841pH
RG=25.Q, |As=28A (See Figure 12)
TJS175°C
© ISDSZBA, di/de170A/ps, VDDSV(BR)DSS.
© Pulse width f 300 vs; duty cycle 32%.
