IRLD110 ,100V Single N-Channel HEXFET Power MOSFET in a HEXDIP packagePD-9.635A
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IRLD110
100V Single N-Channel HEXFET Power MOSFET in a HEXDIP package
PD-9.635A
lRLD110
1nter1atiip!yig
1:212 Rectifier
HEXFET® Power MOSFET
Dynamic dv/dt Rating
o Repetitive Avalanche Rated D
0 For Automatic Insertion
End Stackable
Logic-Level Gate Drive T
RDs(on) Specified at VGs=4V & 5V
175°C Operating Temperature
VDSS = 100V
r, RDS(OI’1) = 0.549
S b---1.0A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The 4-pin DIP package is a low cost machine-insertable case style which can
be stacked in multiple combinations on standard 0.1 inch pin centers. The dual
drain serves as a thermal link to the mounting surface for power dissipation
levels up to 1 watt.
Absolute Maximum Ratings
Parameter Max. Units
ID © Tc = 25°C Continuous Drain Current, VGs a 5.0 V 1.0
In @ To = 100°C Continuous Drain Current, Ves @ 5.0 V 0.70 A
IDM Pulsed Drain Current C) 8.0
PD @ To ctr. 25°C Power Dissipation 1.3 - W
Linear Derating Factor 0.0083 WPC
Vss Gate-to-Source Voltage :10 V
EAS Single Pulse Avalanche Energy © 490 md
|An Avalanche Current (i) 1.0 A
EAR Repetitive Avalanche Energy co 0.13 mJ
dv/dt Peak Diode Recovery dv/dt Co 5.5 V/ns
To Operating Junction and -55 to +175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
_ - _ Parameter Min, l Typ, Max. Units
Lam Junction-to-Ambient - 1 - 120 °C/W
Electrical Characteristics © TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(Bnpss Drain-to-Source Breakdown Voltage 100 - - V Vss=OV, ID: 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.12 - V/°C Reference to 25°C, lo: 1mA
Rosion) Static Drain-to-Source On-Resistance _ - 0.54 n VGs=5.0V, kr=0,60A (g)
- - 0.76 VGs=4.OV, |D=0.50A ©
Vos(my Gate Threshold Voltage 1.0 - 2.0 V Vros=Vss, Irv-- 250PA
ggs Forward Transconductance 1.3 - - S Vns=50V, b=0.60A ©
loss Drain-to-Source Leakage Current - - 25 WA Vos=100V, Vss=OV
- - 250 Vos=80V, VGs=0V, TJ=150°C
less Gate-to-Source Forward Leakage - - 100 n A Ves=10V
Gate-to-Source Reverse Leakage - - -100 VGs=-10V
Q, Total Gate Charge - - 6.1 lo=5.6A
Qgs Gate-to-Source Charge - - 2.6 nC Vos=80V
di Gate-to-Drain ("Miller") Charge - - 3.3 VGs=5.0V See Fig. 6 and 13 ©
tam) Tum-On Delay Time - 9.3 - Voo=50V
tr Rise Time - 47 - ns |o=5.6A
tam") Turn-Off Delay Time _.-.- 16 - Re=129
tf Fall Time - 17 - RD=8.4Q See Figure 10 ©
Lo Internal Drain Inductance - 4.0 - (ih',t,v,t7l./gie.') Hi)
nH from package GE
Ls Internal Source Inductance - 6.0 - Ind center of
die contact s
Ciss Input Capacitance - 250 - Ves=0V
Cass Output Capacitance - 80 - pF Yhs-- 25V
Crss Reverse Transfer Capacitance - 15 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current .-. - 1 0 MOSFET symbol D
(Body Diode) ' A showing/he Ci)
ISM Pulsed Source Current _ - 8 0 integral reverse G (tld,
(Body Diode) (i) ' p-n junction diode. s
Vso Diode Forward Voltage - - 2.5 V TJ=25°C, Is=1.0A, Vss=OV ©
trr Reverse Recovery Time - 110 130 ns TJ=25°C, IF=5.6A
Gr Reverse Recovery Charge - 0.50 0.65 M di/dt=100A/pts G)
ton Forward Tum-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=25V, starting TJ=25°C, L=183mH
Re=259, |As=2.OA (See Figure 12)
© Isos5.6A, di/dts75A/us, Voosvmmoss.
TJS175°C
(ii) Pulse width s: 300 ps; duty cycle 32%.
