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IRLI2505
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
International PD-9A327A
Titat, Rectifier IRLI2505
HEXFET6 Power MOSFET
o Logic-Level Gate Drive
0 Advanced Process Technology D
o Ultra Low On-Resistance VDSS = 55V
0 Isolated Package _
o High Voltage Isolation = 2.5KVRMS S H- A RDS(on) = 0.0089
o Sink to Lead Creepage Dist. = 4.8mm
0 Fully Avalanche Rated ID = 58A
Description s
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance persilicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well I ::t'ti'.',C.i,C,-2ri2-
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications. ':''l'C'.LL.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commerciaI-industrial applications.
The mouldin com ound used rovides a hi h isolation
capability ang a love thermal resistance betthaen the tab TO-220 FULLPAK
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
Absolute Maximum Ratings
Parameter Max. Units
ID © Tc = 25°C Continuous Drain Current, VGs @ 10V 58
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 41 A
IDM Pulsed Drain Current (D6) 360
Pro @Tc = 25°C Power Dissipation 63 W
Linear Derating Factor 0.42 W/°C
I/ss Gate-to-Source Voltage +_16 V
EAS Single Pulse Avalanche Energy (36) 500 mJ
IAR Avalanche Current03© 54 A
EAR Repetitive Avalanche Current(0 6.3 mJ
dv/dt Peak Diode Recovery dv/dt (36) 5.0 V/ns
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 Ibf.in (1 .1N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rout: Junction-to-Case - - 2.4
Ram Junction-to-Ambient - - 65 °CNV
8/25/97
IRLI2505 International
TOR Rectifier
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V Ves = 0V, ID = 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. CoefMient - 0.035 - V/°C Reference to 25°C, ID = 1mA©
- - 0.008 I/ss =10V,ID = 31A GD
Rpsmn) Static Drain-to-Source On-Resistance - - 0.010 Q VGs = 5.0V, ID = 31A ©
- - 0.013 N/ss = 4.0V, ID = 26A GD
Vegan) Gate Threshold Voltage 1.0 - 2.0 V Vros = l/ss, ID = 250pA
gts Forward Transconductance 59 - - S VDS = 25V, ID = 54A©
loss Drain-to-Source Leakage Current : : Ji, PA x3: =- ix x: =" "g, T: = 150°C
I Gate-to-Source Forward Leakage - - 100 nA VGs = 16V
GSS Gate-to-Source Reverse Leakage - - -100 VGS = -16V
Qg Total Gate Charge - - 130 ID = 54A
Qgs Gate-to-Source Charge - - 25 no Vros = 44V
di Gate-to-Drain ("Miller") Charge - - 67 VGs = 5.0V, See Fig. 6 and 13 (43(6)
tti(on) Turn-On Delay Time - 12 - VDD = 28V
tr Rise Time - 160 - ns ID = 54A
td(off) Turn-Off Delay Time - 43 - Rs = 1.39, VGS = 5.0V
tf Fall Time 84 RD = 0.509, See Fig. 10 @©
. Between lead, D
LD Internal Drain Inductance - 4.5 - H 6mm (0.25in.) E
n from package G )
Ls Internal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 5000 - I/ss = 0V
Cass Output Capacitance - 1100 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 390 - f = 1.0MHz, See Fig. 56)
C Drain to Sink Capacitance - 12 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 58 MOSFET symbol D
(Body Diode) A showing the Lt
. ISM Pulsed Source Current - - 360 integral reverse G E
(Body Diode) co p-n Junction mode. s
Vso Diode Forward Voltage - - 1.3 V T: = 25°C, Is = 31A, l/ss = 0V ©
trr Reverse Recovery Time - 140 210 ns Tu = 25°C, IF = 54A
er Reverse RecoveryCharge - 650 970 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsictum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by © ISD f 54A, di/dt g 230A/ps, VDD g V(BR)DSS, © t=60s, f=60Hz
max. junction temperature. ( See fig. 11 ) T: 3 175°C
© VDD = 25V, starting To = 25°C, L = 240pH co Pulse width s: 300ps; duty cycle g 2%. © Use IRL2505 data and test conditions
RG = 259, IAS = 54A. (See Figure 12)
