IRLI3215PBF ,150V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220FullPAK packageapplications. The moulding compound used provides ahigh isolation capability and a low thermal res ..
IRLI3615 ,150V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications. The moulding compound used provides ahigh isolation capability and a low thermal res ..
IRLI3705 ,HEXFET Power MOSFETapplications.The moulding compound used provides a high isolationcapability and a low thermal resis ..
IRLI3705N ,55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications.The moulding compound used provides a high isolationcapability and a low thermal resis ..
IRLI3803 ,30V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications.The moulding compound used provides a high isolationTO-220 FULLPAKcapability and a low ..
IRLI3803PBF ,30V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications.
The moulding compound used provides a high isolation
capability and a low thermal r ..
ISPGDS14-7P , in-system programmable Generic Digital SwitchTM
ISPGDX120A-5T176 , In-System Programmable Generic Digital CrosspointTM
ISPGDX120A-7T176 , In-System Programmable Generic Digital CrosspointTM
ISPGDX160A-5Q208 , In-System Programmable Generic Digital CrosspointTM
ISPGDX160A-7Q208 , In-System Programmable Generic Digital CrosspointTM
ISPGDX160V-5B208 , In-System Programmable 3.3V Generic Digital CrosspointTM
IRLI3215PBF
150V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220FullPAK package
�����������
��������������������
Fifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized devicedesign that HEXFET Power MOSFETs are well known for, provides thedesigner with an extremely efficient and reliable device for use in a wide varietyof applications.
The TO-220 Fullpak eliminates the need for additional insulating hardware incommercial-industrial applications. The moulding compound used provides ahigh isolation capability and a low thermal resistance between the tab andexternal heatsink. This isolation is equivalent to using a 100 micron mica barrierwith standard TO-220 product. The Fullpak is mounted to a heatsink using asingle clip or by a single screw fixing.
������������������������
Thermal ResistanceAdvanced Process TechnologyUltra Low On-ResistanceDynamic dv/dt Rating175°C Operating TemperatureFast SwitchingFully Avalanche Rated
�����������1
����������Lead-Free
�����������
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)��Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
� �Starting TJ = 25°C, L = 4.9mH
RG = 25Ω, IAS = 7.2A. (See Figure 12)ISD ≤ 7.2A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
������� Pulse width ≤ 300µs; duty cycle ≤ 2%.
��Caculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4.
� Uses IRL3215 data and test conditions.
Source-Drain Ratings and Characteristics
�����������
3
Fig 4. Normalized On-ResistanceVs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
�����������
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage
Fig 7. Typical Source-Drain DiodeForward Voltage
�����������
5
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.Case Temperature
���������������
Fig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche EnergyVs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test CircuitIAS
