IRLIB9343 ,-55V Single P-Channel HEXFET Power MOSFET in a TO-220 Full-Pak packageElectrical Characteristics @ T = 25°C (unless otherwise specified)JParameter Min. Typ. Max. Units C ..
IRLIB9343PBF ,-55V Single P-Channel HEXFET Power MOSFET in a TO-220 Full-Pak packageElectrical Characteristics @ T = 25°C (unless otherwise specified)JParameter Min. Typ. Max. Units C ..
IRLIZ14G ,Single N-Channel HEXFET Power MOSFETapplications. The moulding compound used provides a
high isolation capability and a low thermal re ..
IRLIZ24G ,60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications. The moulding compound used provides a
high isolation capability and a low thermal re ..
IRLIZ24N ,55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageInternational
TOR Rectifier
PRELIMINARY
PD -9.1344A
IRLIZ24N
Logic-Level Gate Drive
..
IRLIZ24N. ,55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications.
The moulding compound used provides a high isolation
capability and a low thermal r ..
ISPGDX160VA-3B208 , In-System Programmable 3.3V Generic Digital CrosspointTM
ISPGDX160VA-5B208 , In-System Programmable 3.3V Generic Digital CrosspointTM
ISPGDX240VA-7B388I , In-System Programmable 3.3V Generic Digital CrosspointTM
ISPLSI1016 , In-System Programmable High Density PLD
ISPLSI1016 , In-System Programmable High Density PLD
ISPLSI1016 , In-System Programmable High Density PLD
IRLIB9343
-55V Single P-Channel HEXFET Power MOSFET in a TO-220 Full-Pak package
PD - 95852
International DIGITAL AUDIO MOSFET
TOR Rectifier IRLIB9343
Features
0 Advanced Process Technology
. Key Parameters Optimized for Class-D Audio Key Parameters
Amplifier Applications Vros -55 V
. Low RDSON for Improved Efficiency R t . V = -10V mg
. Low ck; and st for Better THD and Improved DS(ON) yp @ GS - 93
. Low Qrr for Better THD and Lower EMI Qg typ. 31 nC
. 175°C Operating Junction Temperature for Tu max 175 "C
Ruggedness
o Repetitive Avalanche Capability for Robustness and
Reliability D
s TO-220 Full-Pak
Description
This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest
processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery
and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD
and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability.
These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio ampliher
applications.
Absolute Maximum Ratings
Parameter Max. Units
Vros Drain-to-Source Voltage -55 V
VGS Gate-to-Source Voltage t20
lo @ To = 25°C Continuous Drain Current, VGS @ -10V -14 A
ID @ Tc = 100°C Continuous Drain Current, I/ss @ -10V -10
G, Pulsed Drain Current co -60
PD @Tc = 25°C Power Dissipation 33 W
Pro @Tc = 100°C Power Dissipation 20
Linear Derating Factor 0.26 W/°C
TJ Operating Junction and -40 to + 175 ''C
TSTG Storage Temperature Range
Mounting Torque, 6-32 or M3 screw 10 (1.1) lbf-in (N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rouc Junction-to-Case GD - 3.84 "C/W
RQJA Junction-to-Ambient GD - 65
Notes (O through 6) are on page 7
1
4/1/04
IRLI 139343 International
122R Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage -55 - - V l/ss = 0V, ID = -250pA
ABN/oss/AT,, Breakdown Voltage Temp. Coefficient - -52 - mV/°C Reference to 25°C, lo = -1mA
Roam Static Drain-to-Source On-Resistance - 93 105 m9 N/ss = -10V, ID = -3.4A ©
- 150 170 VGS = -4.5V, ID = -2.7A ©
VGsah) Gate Threshold Voltage -1.0 - - V VDS = VGS, ID = -250pA
AVGS(m)/ATJ Gate Threshold Voltage Coefficient - -3.7 - mV/°C
loss Drain-to-Source Leakage Current - - -2.0 pA VDS = -55V, VGS = 0V
- - -25 I/rs = -55V, VGS = 0V, T, = 125°C
lsss Gate-to-Source Forward Leakage - - -100 nA VGS = -20V
Gate-to-Source Reverse Leakage - - 100 VGS = 20V
gis Forward Transconductance 5.3 - - S Vos = -25V, lo = -14A
Qg Total Gate Charge - 31 47 1/ros = -44V
Qgs Pre-Vth Gate-to-Source Charge - 7.1 - l/ss = -10V
di Gate-to-Drain Charge - 8.5 - ID = -14A
ngdr Gate Charge Overdrive - 15 - See Fig. 6 and 19
tdwn) Turn-On Delay Time - 9.5 - VDD = -28V, l/ss = -10V ©
t, Rise Time - 24 - ID = -14A
tum) Turn-Off Delay Time - 21 - ns RG = 2.59
t, Fall Time - 9.5 -
Ciss Input Capacitance - 660 - l/ss = 0V
Coss Output Capacitance - 160 - pF Vros = -50V
Crss Reverse Transfer Capacitance - 72 - f = 1.0MHz, See Fig.5
Coss Effective Output Capacitance - 280 - N/ss = 0V, Vos = 0V to -44V
LD Internal Drain Inductance - 4.5 - Between lead,
nH 6mm (0.25in.)
Ls Internal Source Inductance - 7.5 - from package
and center of die contact
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 190 mJ
IAR Avalanche Current s See Fig. 14, 15, 17a, 17b A
EAR Repetitive Avalanche Energy © mJ
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls @ To = 25°C Continuous Source Current - - -14 MOSFET symbol D
(Body Diode) A showing the Hy
ISM Pulsed Source Current - - -60 integral reverse G D;
(Body Diode) C) p-n junction diode. S
Vu, Diode Forward Voltage - - -1.2 v TJ = 25°C, ls = -14A, vGS = 0v S)
t,, Reverse Recovery Time - 57 86 ns T: = 25°C, IF = -14A
Qrr Reverse Recovery Charge - 120 180 nC di/dt = 1OOA/ps C3)
2
