IRLIZ44G ,60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packagePD-9.849
IRLIZ44G
Intetpatipytl
EOR Rectifier
HEXFET+ Power MOSFET
q Isolated Package
..
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IRLIZ44G
60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
PD-9.849
International
EOR Rectifier IlRLIZ44G
HEXFET® Power MOSFET
0 Isolated Package
0 High Voltage Isolation-- 2.5KVRMS © D V - 60V
0 Sink to Lead Creepage Dist.= 4.8mm DSS -
0 Logic-Level Gate Drive
o RDS(on) Specified at VGS=4V & 5V
o Fast Switching
0 Ease of Paralleling
RDS(on) = 0. 0289
s ID = 30A
Description
Third Generation HEXFETS from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 Fullpak eliminates the need for additional insulating hardware in
commerciaI-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100 micron mica
barrier with standard TO-220 product. The Fullpak is mounted to a heatsink
using a single clip or by a single screw fixing. TO-220 FULLPAK
Absolute Maximum Ratings
Parameter Max. Units
lo © Tc = 25°C Continuous Drain Current, Ves @ 5.0 V 30
lo @ To '..T.7. 10tPC Continuous Drain Current, Ves @ 5.0 V 21 A
IDM Pulsed Drain Current Ci) 120
Po © To = 25°C Power Dissipation 48 W
Linear Derating Factor 0.32 WPC
Vos Gate-to-Source Voltage $10 V
EAS Single Pulse Avalanche Energy (2 400 ml
dv/dt Peak Diode Recovery dv/dt (SD 4.5 V/ns
Tu Operating Junction and -55 to +175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 lbf-in (1.1 N-m)
Thermal Resistance
Parameter Min, Typ. Max. Units
ch Junction-to-Case - - 3.1 O C /W
, RNA Junction-to-Ambient - - 65
lRLIZ44G
Electrical Characteristics @ Tg = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BR)055 Drain-to-Source Breakdown Voltage 60 - - V Ves=0V, lo: 250WA
AV[BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.070 - VPC Reference to 25°C, Io: 1mA
R05(on) Static Drain-to-Source On-Resistance w - 0028 Q Vas---5tV, ko=18A CE)
- _ 0.039 VGs=4.OV, b=15A ©
VGS(th) Gate Threshold Voltage 1.0 - 2.0 V VDs=VGs, ID: 250PA
gis Forward Transconductance 22 - - S VDs=25V, Io=18A ©
loss Drain-to-Source Leakage Current --.. - 25 “A I/ross-MV, VGS=OV
- - 250 Vos=48V, VGs=0V, TJ=150°C
less Gate-to-Source Forward Leakage - - 100 n A Vss=10V,
Gate-to-Source Reverse Leakage - - -100 VGs=-10V
ch Total Gate Charge - - 66 ID=51A
Qgs Gate-to-Source Charge - - 12 nC Vos=48V
di Gate-to-Drain ("Miller") Charge - - 43 VGs=5.0V See Fig. 6 and 13 ©
tam) Turn-On Delay Time - 17 - VDD=3OV
tr Rise Time - 230 - ns lo=51 A
td(oit) Turn-Off Delay Time - 42 - Fle=4.6£2
" Fall Time - 110 - Fio=0.56§2 See Figure 10 ©
LD Internal Drain Inductance - 4.5 - trtrt"ati'nd.') n
nH from package @>
Ls Internal Source Inductance - 7.5 - Ind center of
die contact s
Ciss Input Capacitance - 3300 - VGS=OV
Coss Output Capacitance - 1200 - pF V03: 25V
Crss Reverse Transfer Capacitance - 200 - f=1.0MHz See Figure 5
C Drain to Sink Capacitance - 12 - pF f=1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current - - 30 MOSFET symbol ‘0
(Body Diode) A showing the j-a.
ISM Pulsed Source Current - --- 120 integral reverse G {:L
(Body Diode) co p-n junction diode. s
Vso Diode Forward Voltage - - 2.5 V TJ=25°C, 13:30A, VGS=OV ©
tn Reverse Recovery Time - 90 180 ns TJ=25°C, IF=51A
er Reverse Recovery Charge - 0.65 1.3 p1C dildt=100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD) -
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=25V, starting TJ=25°C, L=518PH
Re=25§2, IAS=30A (See Figure 12)
TJS175°C
© Isoss1A, di/dtf250A/pts, VDDSV(BR)DSS,
© t=60s, f=60HZ
© Pulse width s; 300 ps; duty cycle 52%.
