IRLML0040TRPBF ,40V Single N-Channel HEXFET Power MOSFET in a Micro3 packagePD - 96309AIRLML0040TRPbFHEXFET Power MOSFETV VDSS 40V ± 16 VGS MaxG 1R DS(on) max56 mΩ(@V = 10V) ..
IRLML0060TRPBF ,60V Single N-Channel HEXFET Power MOSFET in a Micro 3 packagePD - 97439AIRLML0060TRPbFHEXFET Power MOSFETV60 VDS
IRLML0040-IRLML0040TRPBF
40V Single N-Channel HEXFET Power MOSFET in a Micro3 package
International
IEER Rectifier
PD - 96309A
IRLML0040TRPbF
H EXFET© Power MOSFET
Voss 40 V
V 2 1 V
GS Max 6 G
RDS(on) max
(@Vss = 10V) D
RDS(on) max
78 mg .
(@Ves = 4.51/) s Micro3TM (SOT-23)
IRLML0040TRPbF
Application(s)
. Load/ System Switch
. DC Motor Drive
Features and Benefits .
Low Roaon)( LC 56mf2) Lower switching losses
Industry-standard pinout Multi-vendor compatibility
Compatible with existing Surface Mount Techniques results in Easier manufacturing
RoHS compliant containing no lead, no bromide and no halogen => Environmentally friendly
MSL1, Consumer qualification Increased reliability
Absolute Maximum Ratings
Symbol Parameter Max. Units
Vos Drain-Source Voltage 40 V
ID © TA = 25°C Continuous Drain Current, Vss @ 10V 3.6
ID @ TA = 70°C Continuous Drain Current, Vas @ 10V 2.9 A
IDM Pulsed Drain Current 15
Po @TA = 25°C Maximum Power Dissipation 1.3 W
Po or, = 70°C Maximum Power Dissipation 0.8
Linear Derating Factor 0.01 WPC
Ves Gate-to-Source Voltage * 16 V
TJ,TSTG Junction and Storage Temperature Range -55 to + 150 "C
Thermal Resistance
Symbol Parameter Typ. Max. Units
Ra, Junction-to-Ambient © - 100 °CNV
Rm Junction-to-Ambient (t<10s) © - 99
ORDERING INFORMA TION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes .03. through Ci) are on page 10
02/29/12
|RLMLOO4OTRPbF
International
TOR Rectifier
Electric Characteristics © T., = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 - - V I/ss = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.04 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 44 56 mn l/ss = 10V, ID = 3.6A ©
- 62 78 Vss = 4.5V, ID = 2.9A ©
Veson) Gate Threshold Voltage 1.0 1.8 2.5 V VDS = Vas, b = 25pA
IDSS Drain-to-Source Leakage Current -- -- 20 pA VDS = 40V, Vss = 0V
- - 250 Vos = 40V, Vss = 0V, T, = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 16V
Gate-to-Source Reverse Leakage - - -1OO Vss = -16V
Re Internal Gate Resistance -- 1.1 -- n
gfs Forward Transconductance 6.2 - - S Vos = 10V, ID: 3.6A
09 Total Gate Charge - 2.6 3.9 ID = 3.6A
Qgs Gate-to-Source Charge - 0.7 - nC Vrys = 20V
di Gate-to-Drain ("Miller") Charge - 1.4 - Ves = 4.5V ©
td(on) Turn-On Delay Time - 5.1 - VDD = 20V
t, Rise Time - 5.4 - ID = 1.0A
tam) Turn-Off Delay Time -- 6.4 -- ns Re = 6.8 Q
t, Fall Time - 4.3 - l/ss = 4.5V
Ciss Input Capacitance - 266 - I/ss = 0V
Cass Output Capacitance - 49 - pF Vos = 25V
Crss Reverse Transfer Capacitance -- 29 -- f = 1.0MHz
Source - Drain Ratings and Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current _ _ 1 3 MOSFET symbol D
(Body Diode) . A showing the G
ISM Pulsed Source Current - _ 15 integral reverse s
(Body Diode) (D p-n junction diode.
Vso Diode Forward Voltage - - 1.2 V T, = 25°C, Is = 1.3A, Vas = 0V ©
trr Reverse Recovery Time -- 10 -- ns T: = 25°C, l/n = 32V, IF: 1.3 A
a,, Reverse Recovery Charge - 9.3 - nC di/dt = 100A/ps ©
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