IRLR014N ,55V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRLR014NTRPBF ,55V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. Parameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ 1 ..
IRLR014TR ,60V Single N-Channel HEXFET Power MOSFET in a D-Pak packagePD-9.624A
International
TOR Rectifier IRLR014
HEXFETOD Power MOSFET IR LU O1 4
q Dynamic ..
IRLR014TR ,60V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. Power dissipation levels up to 1.5 watts
are possible In typical surface mount
IRLR014TRLPBF , Power MOSFET
IRLR014TRLPBF , Power MOSFET
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ISPLSI1048E-50LT , In-System Programmable High Density PLD
ISPLSI1048E70LQ , In-System Programmable High Density PLD
ISPLSI1048E-70LQ , In-System Programmable High Density PLD
ISPLSI1048E-70LQ , In-System Programmable High Density PLD
ISPLSI1048E-70LQ , In-System Programmable High Density PLD
IRLR014N
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International
Tart, Rectifier
PD- 94350
|RLR/UO14N
HEXFET0 Power MOSFET
Logic-Level Gate Drive D
Surface Mount (IRLR024N)
Straight Lead (IRLU024N)
Advanced Process Technology - "
Fast Switching G
Fully Avalanche Rated
VDSS = 55V
RDS(on) = 0.149
ID = 10A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or D-Pak
wave soldering techniques. The straight lead version (IRFU series) is for TO-MMA TO-MIAA
through-hoie mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 10
ID @ Tc = 100°C Continuous Drain Current, Ves @ 10V 7.1 A
IDM Pulsed Drain Current C) 40
Po @Tc = 25°C Power Dissipation 28 W
Linear Derating Factor 0.2 W/°C
VGS Gate-to-Source Voltage l 16 V
EAS Single Pulse Avalanche Energy© 35 mJ
IAR Avalanche Current(0 6.0 A
EAR Repetitive Avalanche Energy® 2.8 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range cc
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 5.3
ROJA Case-to-Ambient (PCB mount)" - 50 °C/W
RQJA Junction-to-Ambient - 110
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
Downloaded from: http://www.datasheetcata|o_q.com/
5/4/99
IRLR/U014N
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V VGs = 0V, ID = 250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - 0.056 - V/°C Reference to 25°C, ID = 1mA
. . . - - 0.14 VGs=10V,lo=6A©
RDSW Static Drain-to-Source On-Resistance - - 0.21 Q N/ss = 4.5V, ID = 5 A ©
VGS(th) Gate Threshold Voltage 1.0 - - V Vros = Yas ID = 250pA
gfs Forward Transconductance 3.1 - - S Vros = 25V, ID = 6A©
loss Drain-to-Source Leakage Current : : 22:0 pA x2: , 'li), x2: , g, TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 16V
Gate-to-Source Reverse Leakage - - -100 N/ss = -16V
Qg Total Gate Charge - - 7.9 ID = 6A
Qgs Gate-to-Source Charge - - 1.4 nC Vros = 44V
di Gate-to-Drain ("Miller") Charge - - 4.4 VGS = 5.0V, See Fig. 6 and 13 co
tdem) Turn-On Delay Time - 6.5 - VDD = 28V
tr Rise Time - 47 - ns lo = 6A
td(off) Turn-Off Delay Time - 12 - Rs = 6.29, VGS = 5.0V
tf Fall Time 23 R9 = 4.59, See Fig. 10 ©
. Between lead, D
u, Internal Drain Inductance - 4.5 - nH 6mm (0.25in.) E )
LS Internal Source Inductance - 7.5 - 2:21“ c::(t::fg:die contact© s
Ciss Input Capacitance - 265 - VGS = 0V
Coss Output Capacitance - 80 - pF Vros = 25V
Crss Reverse Transfer Capacitance - 38 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 10 A showing the
ISM Pulsed Source Current - - 40 integral reverse G
(Body Diode) co p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V T: = 25°C, Is = 6A, l/ss = 0V co
trr Reverse Recovery Time - 37 56 nS T: = 25°C, IF = 6A
Qrr Reverse RecoveryCharge - 48 71 nC di/dt = 100Alps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
0) Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11 )
© Starting To = 25''C, L = 1.96mH
Rs = 250, IAS-- 6A. (See Figure 12)
© Iso 5 6.0A, di/dt s 210A/ps, vDD s
V(BR)Dss,
TJs 175°C
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© Pulse width 5 300ps; duty cycle 5 2%.
s This is applied for I-PAK, Ls of D-PAK is measured between
lead and center of die contact
