IRLR120N ,N-channel power MOSFET / 100V / 10APD - 91541BIRLR/U120N®HEXFET Power MOSFETl Surface Mount (IRLR120N)Dl Straight Lead (IRLU120N)V = 1 ..
IRLR120NTR ,100V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRLR120TR ,100V Single N-Channel HEXFET Power MOSFET in a D-Pak packageInternational
IEQR
Rectifier
PD-9.636A
|RLR120
HEXFET® Power MOSFET
. Dynamic dv/ ..
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IRLR120N
N-channel power MOSFET / 100V / 10A
PD - 91541B
IRLR/JI20N
International
TOR Rectifier
HEXFET© Power MOSFET
0 Surface Mount (IRLR120N) D
. Straight Lead (IRLU120N) VDSS = 100V
0 Advanced Process Technology
0 Fast Switching -
0 Fully Avalanche Rated G FN, Rroson) - 0.185n
Description ID = 10A
Fifth Generation HEXFETs from International Rectifier S
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely ethcient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using ., _
vapor phase, infrared, or wave soldering techniques. D-PAK I-PAK
The straight lead version (IRFU series) is for through- TO-252AA TO-251AA
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Ves @ 10V 10
ID @ To = 100°C Continuous Drain Current, Ves @ 10V 7.0 A
IDM Pulsed Drain Current (06) 35
PD @Tc = 25°C Power Dissipation 48 W
Linear Derating Factor 0.32 W/''C
VGS Gate-to-Source Voltage 1 16 V
EAS Single Pulse Avalanche Energy©© 85 m]
IAR Avalanche Current0)© 6.0 A
EAR Repetitive Avalanche EnergyO© 4.8 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 3.1
ReJA Junction-to-Ambient (PCB mount) ** - 50 ''C/W
ReJA Junction-to-Ambient - 110
1
5/11/98
|RLR/U120N International
IEBR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
ViBR)DSS Drain-to-Source Breakdown Voltage 100 - - V Ves = 0V, ID = 250pA
AV
- - 0.185 VGS =10V,lro = 6.0A ©
Rrosom Static Drain-to-Source On-Resistance - _ 0.225 w VGS = 5.0V, ID = 6.0A ©
- - 0.265 VGS = 4.0V, ID = 5.0A ©
VGS(th) Gate Threshold Voltage 1.0 - 2.0 V Ws = VGs, ks = 250pA
9ts Forward Transconductance 3.1 - - S VDs = 25V, ID = 6.0A©
loss Drain-to-Source Leakage Current _- _- 22550 pA V3: =" I'),):,),)',, = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 16V
Gate-to-Source Reverse Leakage - - -100 VGS = -16V
09 Total Gate Charge - - 20 ID = 6.0A
Qgs Gate-to-Source Charge - - 4.6 nC Vros = 80V
di Gate-to-Drain ("Miller") Charge - - IO VGS = 5.0V, See Fig. 6 and 13 ©©
td(on) Turn-On Delay Time - 4.0 - VDD = 50V
tr Rise Time - 35 - ns ID = 6.0A
td(off) Turn-Off Delay Time - 23 - Rs = 119, VGS = 5.0V
tr Fall Time 22 Ro = 8.29, See Fig. 10 ©©
LD Intemal Drain Inductance - 4.5 - nH it',tlCi'.n2:d)' JG“
Ls Internal Source Inductance - 7.5 --.- ::C:::::E:die contacts h
Ciss Input Capacitance - 440 - VGS = 0V
Coss Output Capacitance - 97 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 50 - f = 1.0MHz, See Fig. 5©
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current _ _ 10 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) C)6) - - 35 p-n junction diode. S
VSD Diode Forward Voltage - - 1.3 V To = 25°C, ls = 6.0A, I/ss = 0V ©
trr Reverse Recovery Time - 110 160 ns T J = 25°C, IF =6.0A
Qrr Reverse RecoveryCharge - 410 620 nC di/dt = 100Alps C)(E)
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by 6) Pulse width f 300ps; duty cycle f 2%.
max. junction temperature. (See ng. 11 )
© VDD = 25V, starting TJ = 25°C, L = 4.7mH G) This is applied for I-PAK, Ls of D-PAK is measured between lead and
Rs = 259, IAS = 6.0A. (See Figure 12) center of die contact
© ISD s 6.0A, di/dt s 340A/ps, Vroro s V(BR)rsss, © Uses IRL520N data and test conditions.
T J 3 175°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994 .
