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IRLR2905Z
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD - 95848C
|RLR29052
|RLU2905Z
HEXFET®PowerMOSFET
International
TOR Rectifier AUTOMOTIVE MOSFET
Features
Logic Level
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature r " RDS(on) = 13.5mQ
Fast Switching
Repetitive Avalanche Allowed up to Tjmax ID = 42A
VDSS = 55V
Description
Specifically designed for Automotive applications, this HEXFETQ
Power MOSFET utilizes the latest processing techniques to 14iit 'tik
achieve extremely low on-resistance per silicon area. Additional Ri' l 'Rrt)
features of this design are a 175°C junction operating tempera- l '
ture, fast switching speed and improved repetitive avalanche
rating .These features combine to make this design an extremely
efficientand reliable deviceforuse in Automotive applications and D-Pak I-Pak
a wide variety of other applications. IRLR2905Z IRLU29052
Absolute Maximum Ratings
Parameter Max. Units
ID © TC = 25°C Continuous Drain Current, Vss © 10V (Silicon Limited) 60
ID © TC = 100°C Continuous Drain Current, Vss © 10V 43 A
ID © TC = 25°C Continuous Drain Current, Vss @ 10V (Package Limited) 42
'DM Pulsed Dram Current T 240
PD orc = 25°C Power Dissipation 110 W
Linear Derating Factor 0.72 W/°C
VGS Gate-to-Source Voltage 1 16 V
EAS (Thermallylimited) Single Pulse Avalanche Energy© 57 mJ
EAS (Tested ) Single Pulse Avalanche Energy Tested Value © 85
IAR Avalanche Current C) See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy co mJ
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rom Junction-to-Case _ 1.38
ROJA Junction-to-Ambient (PCB mount) © _ 50 °C/W
ROJA Junction-to-Ambient - 110
HEXFETO is a registered trademark of International Rectifier.
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8/28/09
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IRLR/U2905Z
International
TOR Rectifier
Electrical Characteristics © Tu = 25''C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 -- - V Vss = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.053 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 11 13.5 mg Vas = 10V, ID = 36A ©
- - 20 m9 Vas = 5.0V, ID = 30A ©
- - 22.5 mn Vss = 4.5V, ID = 15A ©
VGS(th) Gate Threshold Voltage 1.0 -- 3.0 v Vos = Vss, ID = 250PA
gfs Forward Transconductance 25 - - S Vos = 25V, ID = 36A
loss Drain-to-Source Leakage Current - - 20 pA Vos = 55V, Vas = 0V
- - 250 Vos = 55V, Vas = 0V, TI, = 125°C
less Gate-to-Source Forward Leakage - - 200 nA l/ss = 16V
Gate-to-Source Reverse Leakage -- -- -200 Vss = -16V
as, Total Gate Charge - 23 35 ID = 36A
Qgs Gate-to-Source Charge - 8.5 - nC Vos = 44V
di Gate-to-Drain ("Miller") Charge - 12 - Vss = 5.0V ©
td(on) Turn-On Delay Time - 14 - VDD = 28V
t, Rise Time - 130 - ID = 36A
td(off) Turn-Off Delay Time - 24 - ns Rs = 15 Q
t, Fall Time - 33 - Vas = 5.0V s
Lo Internal Drain Inductance - 4.5 - Between lead, -s, D
nH 6mm (0.25in.) EA
Ls Internal Source Inductance - 7.5 - from package G FL
and center of die contact s
Ciss Input Capacitance - 1570 - Vas = 0V
Coss Output Capacitance - 230 - l/rss = 25V
Crss Reverse Transfer Capacitance - 130 - pF f = 1.0MHz
Coss Output Capacitance - 840 - Vss = OV, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 180 - Ves = 0V, Vos = 44V, f = 1.0MHz
Cass eff. Effective Output Capacitance - 290 - Vas = 0V, VDS = 0V to 44V ©
Source-Drain Ratings and Characteristics
Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 42 MOSFET symbol D
(Body Diode) A showing the Lt
ISM Pulsed Source Current - - 240 integral reverse G E
(Body Diode) T p-n junction diode. q
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, IS = 36A, VGS = 0V ©
trr Reverse Recovery Time - 22 33 ns TJ = 25°C, IF = 36A, VDD = 28V
Qrr Reverse Recovery Charge - 14 21 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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