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IRLR8713
25V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International
TOR. Rectifier
Applications
0 High Frequency Synchronous Buck
PD - 97067
IFlLR8713PbF
IFlLU8713PbF
H EXFET® Power MOSFET
Converters for Com uter Processor Power
. p Voss RDS(on) max Clg
o High Frequency Isolated DC-DC
Converters with Synchronous Rectification 25V 4.8mQ 17.4nC
for Telecom and Industrial Use
Benefits (14aiiit tiib
0 Very Low RDS(on) at 4.5V l/ss 'il)i', l, Rie
o Ultra-Low Gate Impedance I, D . . s
q Fully Characterized Avalanche Voltage G GD
and Current D-Pak I-Pak
o Lead-Free IRLfR8713PbF lRLU8713PbF
Gate Drain Source
Absolute Maximum Ratings
Parameter Max. Units
Vros Drain-to-Source Voltage 25 V
VGS Gate-to-Source Voltage , 20
ID @ Tc = 25°C Continuous Drain Current, Vss @ 10V 100©
ID @ Tc = 100°C Continuous Drain Current, Vss @ 10V 7269 A
IDM Pulsed Drain Current co 410
PD @TC = 25°C Maximum Power Dissipation © 81 w
PD @Tc = 100°C Maximum Power Dissipation S 40
Linear Derating Factor 0.54 W/°C
To Operating Junction and -55 to + 175 °C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Typ. Max. Units
Ro JC Junction-to-Case © --.- 1.86
ROJA Junction-to-Ambient (PCB Mount) SCE) _ 50 °C/W
RNA Junction-to-Ambient © - 110
Notes (D through © are on page 10
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IRLR/U8713PbF
International
TOR Rectifier
Static © TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 25 - - V Vos = 0V, ID = 250pA
ABI/oss/ATU Breakdown Voltage Temp. Coefficient - 16 - mV/°C Reference to 25°C, ID = 1mA
Rosmn) Static Drain-to-Source On-Resistance - 3.8 4.8 m9 I/ss = 10V, ID = 21A ©
- 5.0 6.3 I/ss = 4.5V, ID = 17A ©
Vesnh) Gate Threshold Voltage 1.35 1.85 2.35 V Vos = Vas, b = 50pA
AVGSm,)/ATJ Gate Threshold Voltage Coefficient - -7.0 - mV/°C
loss Drain-to-Source Leakage Current - -- 1.0 pA Vos = 20V, l/ss = 0V
- - 150 Vos = 20v, Vas = OV, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 nA I/ss = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
gfs Forward Transconductance 79 - - S Vos = 13V, ID = 17A
Q, Total Gate Charge - 17.4 26
Qgs1 Pre-Vth Gate-to-Source Charge - 4.0 - Vos = 13V
Qgsz Post-Vth Gate-to-Source Charge - 2.2 - nC I/ss = 4.5V
di Gate-to-Drain Charge - 5.8 - ID = 17A
Qqodr Gate Charge Overdrive __- 5.4 __- See Fig.16
st Switch Charge (0932 + di) - 8.0 -
Qoss Output Charge - 8.6 - nC Vos = 10V, l/ss = 0V
Rs Gate Resistance - 0.9 1.6 Q
tum") Turn-On Delay Time - 14 - Vor, = 13V, Vas = 4.5)/(3)
t, Rise Time - 24 - ID = 17A
tson Turn-Off Delay Time - 12 - ns Clamped Inductive Load
t, Fall Time - 5.9 -
Ciss Input Capacitance - 2240 - I/ss = 0V
Cass Output Capacitance - 580 - pF Vos = 13V
G, Reverse Transfer Capacitance --.- 270 --.- f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 190 mJ
|AR Avalanche Current (D - 17 A
EAR Repetitive Avalanche Energy T - 8.1 mJ
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 100© MOSFET symbol D u
(Body Diode) A showing the Lt >
ISM Pulsed Source Current - - 410 integral reverse G E s
(Body Diode) (D p-n junction diode. a
Vso Diode Forward Voltage - - 1.0 V T: = 25°C, ls = 17A, l/tss = 0V s
t,, Reverse Recovery Time -- 16 24 ns TJ = 25°C, IF = 17A, VDD = 13V
0,, Reverse Recovery Charge - 15 23 nC di/dt = 300A/ps C))
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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