IRLZ14 ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageIntettryhipt?al
TOR Rectifier
HEXFET® Power MOSFET
q Dynamic dv/dt Rating
. Logic-Level Gat ..
IRLZ14L ,Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=10A)applications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRLZ14S ,60V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRLZ24 ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagelntemational
1:212 Rectifier
PD-9.557C
lRLZ24
HEXFET® Power MOSFET
q Dynamic dv/dt R ..
IRLZ24N ,55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
IRLZ24N ,55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
ISPLSI2064VE-100LT44 , 3.3V In-System Programmable High Density SuperFAST™ PLD
ISPLSI2064VE-100LT44 , 3.3V In-System Programmable High Density SuperFAST™ PLD
ISPLSI2064VE-135LT100 , 3.3V In-System Programmable High Density SuperFAST™ PLD
ISPLSI2064VE-135LT100 , 3.3V In-System Programmable High Density SuperFAST™ PLD
ISPLSI2064VE-135LT100 , 3.3V In-System Programmable High Density SuperFAST™ PLD
ISPLSI2064VE-135LT100 , 3.3V In-System Programmable High Density SuperFAST™ PLD
IRLZ14
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Mtttyrrtati
Rectifier
PD-9.556C
IRLZ14
HEXFET® Power MOSFET
Dynamic dv/dt
0 Logic-Level Gate Drive
RDS(on) Specified at VGS=4V & 5V
175°C Operating Temperature
0 Fast Switching
o Ease of Paralleling
0 Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
Rating
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the T0220 contribute to its wide
acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units L
In @ To = 25°C Continuous Drain Current, Ves © 5.0 V 10
ID @ To = 100°C Continuous Drain Current, l/as @ 5.0 V 7.2 A
los, Pulsed Drain Current co 40
pr, @ To = 25°C Power Dissipation 43 W
Linear Derating Factor 0.29 WPC
VGs Gate-to-Source Voltage :10 V
EAs Single Pulse Avalanche Energy © 68 mJ
dv/dt Peak Diode Recovery dv/dt Q) 4.5 V/ns
To Operating Junction and -55 to +175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 lbfoin (1.1 Nom)
Thermal Resistance
Parameter Min. Typ. Max. Units
Reno Junction-to-Case Lt - - 3.5
Recs Case-to-Sink, Flat, Greased Surface - 0.50 - °C/W
Fu, Junction-to-Ambient - - L 62
IF1LZ1
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter 1 Min. Typ. Max. Units Test Conditigné
V(BR)DSS Drain-to-Source Breakdown Voltage 60 - - V VGs=0V, ID: 250PA -
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.070 - V/OC Reference to 25°C, b-- 1mA
RDS(on) Static Drain-to-Source On-Resistance H - O.20 f2 VGSZS'OV' In=6,0A ©
MM "T"-, - 0.28 Vss=4,0V, ID=5.0A C) _ ---
VGS(th) Gate Threshold Voltage 1.0 - 2.0 V Vos=VGs, ID: 2500A
gts Forward Transconductare -----w- SMS M = - S Vos:25V, |o=6.0A © - -
loss Drain-to-Source Leakage Current _- - 25 PA -l(i--ftr,_i1sE--_tll1_.s.,
- - 250 VDs=48V, VGs=0V, TJ=15000
less Gate-to-Source Forward Leakage - - 100 n A Vss=10V
Gate-to-Source Reverse Leakage - .._ -100 VGs---10V
09 Total Gate Charge - - 8.4 lo=10A
Qgs Gate-to-Source Chargé _------, '_4 : 3.5 nC VDs--48V
di Gate-to-Drain ("Miller") Charge - - 6.0 VGs=5.0V See Fig. 6 and 13 @
td(on) Turn-On Delay Time - 9.3 - VDD=30V
t, Rise Time M M --.- __-__.,,)!).,:''',.-, ns lrs--10A
td(oii) Turn-Off Delay Time H 17 - RG.--12f2
't___......-").- - 26 - RD=2.8Q See Figure 10 co
Lo Internal Drain Inductance - 4.5 - it2t72'snd.') D
____ __-_... _ nH from package GE )
Ls Internal Source Inductance - 7.5 - and center of
_ die contact s
Ei-sr'-'" "ir'rjuTCapaoitance - 400 I - i Vcs--0V
Cogs Output Capacitance M Mr __-_, _17f), =, ', PF VDs=25V
Crss _lyt/.tTis.Ir_ary1err, Iiya_ci_tjiyee, M _r, 42 rr-r-i f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max Units Test Conditions
Is Continuous Source Current M - 10 MOSFET symbol D
(Body Diode) _. M - - _M M _M_M A showing the F7:
Iss, Pulsed Source Current - - 40 integral reverse G CL
(Body Diode) C) p-n junction diode. S
VSD DiodCF1rvi_t1rp_elt_tyie, MM__ -_- _r, =, M 1.6 V TJ=25°C, ls=10A, I/Ge-roy/o,
tn Reverse Recpvery “mi! - = _M fL3, M13_0M Mn_sM - TJ=25°C, |p=10A
er Reverse Recovery Charge - 0.34 0.65 wc di/dr=100A/ps Cg)
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+Lo) l
Notes:
Ci) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=25V, starting TJ=25°C, L--793WH
RG=25§2, IAs=10A (See Figure 12)
co 13031 0A, dildts90A/ps, VDDSV(BR)Dss,
TJS175°C
co Pulse width I 300 ps; duty cycle C2%.
