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IRS20124STRPBFIORN/a2226avaiDigital Audio Driver with Discrete Dead-Time and Protection. High and Low Side Driver in a 14-Lead SOIC package


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IRS20124STRPBF
Digital Audio Driver with Discrete Dead-Time and Protection. High and Low Side Driver in a 14-Lead SOIC package
International
15.212 Rectifier
Data Sheet No. PD60240
IRS20124(S)PbF
Digital Audio Driver with Discrete Deadtime and Protection
Featu res
o 200 V high voltage ratings deliver up to 1000 W
output power in Class D audio ampliher
applications
Integrated deadtime generation and bi-directional
over-currentsensing simplify design
q Programmable compensated preset deadtime for
improved THD performances over temperature
High noise immunity
Shutdown function protects devices from overload
conditions
q Operates up to 1 MHz
3.3 V/5 V logic compatible input
RoHS compliant
Typical Application Diagram
Product Summary
200 V max.
1 A/ 1.2 A typ.
VSUPPLY
Selectable Deadtime
15 ns, 25 ns, 35 ns, 45 ns typ
Prop Delay Time 60 ns typ.
Bi-Directional Over-
Current Sensing
Package _
s6i.iii,tt,s,,,,,,,,,
'tit:')'''''"
" 14-Lead SOIC
OCSET1 NC
DT/SD VB
OCSET2
LO Vcc
o-] IRS20124


International IRS20124S(PbF)
IEER Rectifier
Description
The IRS20124 is a high voltage, high speed power MOSFET driver with internal deadtime and shutdown
functions specially designed for Class D audio amplifier applications.
The internal dead time generation block provides accurate gate switch timing and enables tight deadtime
settings for better THD performances.
In order to maximize other audio performance characteristics, all switching times are designed for immunity
from external disturbances such as Vcc perturbation and incoming switching noise on the DT pin. Logic
inputs are compatible with LSTTL output or standard CMOS down to 3.0 V without speed degradation. The
output drivers feature high current buffers capable of sourcing 1.0 A and sinking 1.2 A. Internal delays are
optimized to achieve minimal deadtime variations. Proprietary HVIC and latch immune CMOS technologies
guarantee operation down to Vs-- -4 V, providing outstanding capabilities of latch and surge immunities with
rugged monolithic construction.
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are absolute voltages referenced to COM. All currents are defined positive into any lead. The thermal resistance and power
dissipation ratings are measured under board mounted and still air conditions.
Symbol Definition Min. Max. Units
VB High-side floating supply voltage -0.3 220
Vs High-side floating supply voltage VB-ZO VB+0.3
VH0 High-side floating output voltage Vs-0.3 VB+0.3
Vcc Low-side fixed supply voltage -O.3 20
VLO Low-side output voltage -0.3 Vcc+0.3 V
VIN Input voltage -0.3 Vcc+0.3
Voc oc pin input voltage -0.3 Vcc+0.3
VOCSET1 OCSET1 pin input voltage -0.3 VCC+0.3
VOCSETZ OCSET2 pin input voltage -O.3 Vcc+0.3
dl/s/dt Allowable Vs voltage slew rate - 50 V/ns
PD Maximum power dissipation - 1.25 W
RthJA Thermal resistance, junction to ambient - 100 °C/W
To Junction temperature - 150
Ts Storage temperature -55 150 'C
TL Lead temperature (soldering, 10 seconds) - 300
2

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