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ISL9V5036S3 FAIRCHILDN/a5avai31A, 360V Logic Level, Voltage Clamped, Avalanche Energy Rated, ESD Protected IGBT
ISL9V5036S3STFAIRCHILDN/a671avai360V EcoSPARK 500mJ N-Channel Ignition IGBT


ISL9V5036S3ST ,360V EcoSPARK 500mJ N-Channel Ignition IGBTISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3October 2004ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3TMEco ..
ISO102 ,SIGNAL ISOLATION BUFFER AMPLIFIERS
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ISL9V5036S3 -ISL9V5036S3ST
31A, 360V Logic Level, Voltage Clamped, Avalanche Energy Rated, ESD Protected IGBT
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 October 2004 ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 TM EcoSPARK 500mJ, 360V, N-Channel Ignition IGBT General Description Applications Automotive Ignition Coil Driver Circuits The ISL9V5036S3S, ISL9V5036P3, and ISL9V5036S3 are the next Coil-On Plug Applications generation IGBTs that offer outstanding SCIS capability in the D²- Pak (TO-263) and TO-220 plastic package. These devices are Features intended for use in automotive ignition circuits, specifically as coil 2 drivers. Internal diodes provide voltage clamping without the need Industry Standard D -Pak package o for external components.SCIS Energy = 500mJ at T = 25 C J Logic Level Gate Drive EcoSPARK™ devices can be custom made to specific clamp voltages. Contact your nearest Fairchild sales office for more information. Formerly Developmental Type 49443 Package Symbol COLLECTOR JEDEC TO-263AB JEDEC TO-220AB JEDEC TO-262AA D²-Pak E C E G C G R 1 GATE G R 2 E EMITTER COLLECTOR COLLECTOR (FLANGE) (FLANGE) Device Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units BV Collector to Emitter Breakdown Voltage (I = 1 mA) 390 V CER C BV Emitter to Collector Voltage - Reverse Battery Condition (I = 10 mA) 24 V ECS C E At Starting T = 25°C, I = 38.5A, L = 670 μHy 500 mJ SCIS25 J SCIS E At Starting T = 150°C, I = 30A, L = 670 μHy 300 mJ SCIS150 J SCIS I Collector Current Continuous, At T = 25°C, See Fig 9 46 A C25 C I Collector Current Continuous, At T = 110°C, See Fig 9 31 A C110 C V Gate to Emitter Voltage Continuous ±10 V GEM P Power Dissipation Total T = 25°C 250 W D C Power Dissipation Derating T > 25°C 1.67 W/°C C T Operating Junction Temperature Range -40 to 175 °C J T Storage Junction Temperature Range -40 to 175 °C STG T Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s) 300 °C L T Max Lead Temp for Soldering (Package Body for 10s) 260 °C pkg ESD Electrostatic Discharge Voltage at 100pF, 1500Ω 4kV ©2004 ISL9V5036S3S / ISl9V5036P3 / ISL9V5036S3 Rev. C3, October 2004
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