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J105SILICONIXN/a3000avaiSwitch


J105 ,SwitchJ105 / J106 / J107 / NDSJ105Discrete POWER & SignalTechnologiesNJ105 NDSJ105J106J107GDG TO-92SSSOT- ..
J106 ,SwitchS-04028—Rev. D, 04-Jun-017-1J105/106/107Vishay Siliconix       ..
J107 ,N-Channel Switchapplications wherevery low On Resistance is mandatory. Sourced from Process 59.Absolute Maximum Rat ..
J108 ,N-Channel SwitchS-04028—Rev. E, 04-Jun-017-1J/SST108 SeriesVishay Siliconix     Gate-Drain, Gate-So ..
J109 ,N-Channel JFET SwitchJ108 / J109 / J110Discrete POWER & SignalTechnologiesNJ108J109J110G TO-92SDN-Channel SwitchThis dev ..
J110 ,N-Channel Switchapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
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J105
Switch
Discrete POWER & Signal
Technologies
J105
J106
J107
N-Channel Switch

This device is designed for analog or digital switching applications where
very low On Resistance is mandatory. Sourced from Process 59.
NDSJ105SD
TO-92
SOT-23
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES
:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol Parameter Value Units

VDG Drain-Gate Voltage 25 V
VGS Gate-Source Voltage - 25 V
IGF Forward Gate Current 10 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
Symbol Characteristic Max Units
J105 / J106 / J107
Total Device Dissipation
Derate above 25°C
mW/°C
RθJC Thermal Resistance, Junction to Case 125 °C/W
RθJA Thermal Resistance, Junction to Ambient 357 °C/W
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