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JDV2S05ETOSHIBAN/a109000avaiDiode Silicon Epitaxial Planar Type VCO for UHF band


JDV2S05E ,Diode Silicon Epitaxial Planar Type VCO for UHF bandJDV2S05E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S05E VCO for UHF band Unit: mm  Sm ..
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JDV2S05E
Diode Silicon Epitaxial Planar Type VCO for UHF band
JDV2S05E TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S05E

VCO for UHF band Small Package High Capacitance Ratio : C1V/C4V = 1.9 (typ.) Low Series Resistance : rs = 0.30 Ω (typ.)
Maximum Ratings (Ta �
�� � 25°C)
Electrical Characteristics (Ta �
�� � 25°C)
C1V VR � 1 V, f � 1 MHz�
Note: Signal level when capacitance is measured. Vsig � 100 mVrms
Marking

Unit: mm
Weight: 0.0014 g (typ.)
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