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KSA1182FAIRCHILDN/a9000avaiPNP (LOW FREQUENCY POWER AMPLIFIER)
KSA1182YMTFFAIRCHILD ?N/a2780avaiPNP Epitaxial Silicon Transistor
KSA1182YMTFFAIRCHILD N/a6000avaiPNP Epitaxial Silicon Transistor
KSA1182YMTFKECN/a3000avaiPNP Epitaxial Silicon Transistor


KSA1182 ,PNP (LOW FREQUENCY POWER AMPLIFIER)KSA1182KSA1182Low Frequency Power Amplifier• Complement to KSC285932SOT-2311. Base 2. Emitter 3 ..
KSA1182Y , Low Frequency Power Amplifier
KSA1182-Y , Low Frequency Power Amplifier
KSA1182YMTF ,PNP Epitaxial Silicon TransistorKSA1182KSA1182Low Frequency Power Amplifier• Complement to KSC285932SOT-2311. Base 2. Emitter 3 ..
KSA1182YMTF ,PNP Epitaxial Silicon TransistorKSA1182KSA1182Low Frequency Power Amplifier• Complement to KSC285932SOT-2311. Base 2. Emitter 3 ..
KSA1182YMTF ,PNP Epitaxial Silicon TransistorKSA1182KSA1182Low Frequency Power Amplifier• Complement to KSC285932SOT-2311. Base 2. Emitter 3 ..
L800BB12VC , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB12VI , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB70VI , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB90VC , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB90VI , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BT70VC , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory


KSA1182-KSA1182YMTF
PNP Epitaxial Silicon Transistor
KSA1182 KSA1182 Low Frequency Power Amplifier • Complement to KSC2859 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Base Voltage -35 V CBO V Collector-Emitter Voltage -30 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current -500 mA C P Collector Power Dissipation 150 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units I Collector Cut-off Current V = -35V, I =0 -0.1 μA CBO CB E I Emitter Cut-off Current V = -5V, I =0 -0.1 μA EBO EB C h DC Current Gain V = -1V, I = -100mA 70 240 FE1 CE C h V = -6V, I = -400mA 25 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I = -100mA, I = -10mA -0.1 -0.25 V CE C B V (on) Base-Emitter On Voltage V = -1V , I = -100mA -0.8 -1.0 V BE CE C f Current Gain Bandwidth Product V = -6V, I = -20mA 200 MHz T CE C C Output Capacitance V = -6V, I = 0, f=1MHz 13 pF ob CB E h Classification FE Classification O Y h 70 ~ 140 120 ~ 240 FE1 Marking F10 h grade FE ©2002 Rev. A2, September 2002
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