KSA642 ,PNP Epitaxial Silicon TransistorKSA642KSA642Low Frequency Power Amplifier• Complement to KSD227• Collector Power Dissipation : P = ..
KSA642 ,PNP Epitaxial Silicon TransistorKSA642KSA642Low Frequency Power Amplifier• Complement to KSD227• Collector Power Dissipation : P = ..
KSA642GBU ,PNP Epitaxial Silicon TransistorKSA642KSA642Low Frequency Power Amplifier• Complement to KSD227• Collector Power Dissipation : P = ..
KSA643 ,PNP Epitaxial Silicon TransistorKSA643KSA643Low Frequency Power Amplifier• Collector Power Dissipation: P =500mWC• Complement to KS ..
KSA708 ,PNP Epitaxial Silicon TransistorKSA708KSA708Low Frequency Amplifier & Medium Speed Switching• Complement to KSC1008• Collector-Base ..
KSA708YBU ,PNP Epitaxial Silicon TransistorKSA708KSA708Low Frequency Amplifier & Medium Speed Switching• Complement to KSC1008• Collector-Base ..
L800BB12VC , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB12VI , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB70VI , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB90VC , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB90VI , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BT70VC , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
KSA642
PNP Epitaxial Silicon Transistor
KSA642 KSA642 Low Frequency Power Amplifier • Complement to KSD227 • Collector Power Dissipation : P = 400mW C • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Base Voltage -30 V CBO V Collector-Emitter Voltage -25 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current (DC) -300 mA C I * Collector Current (Pulse) -500 mA CP P Collector Power Dissipation 400 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG * PW≤10ms, Duty cycle≤50% Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = -100μA, I=0 -30 V CBO C E BV Collector-Emitter Breakdown Voltage I = -10mA. I=0 -25 V CEO C B BV Emitter-Base Breakdown Voltage I = -10μA. I=0 - 5 V EBO E C I Collector Cut-off Current V = -25V, I=0 -100nA CBO CB E I Emitter Cut-off Current V = -3V, I=0 -100nA EBO EB C h * DC Current Gain V = -1V, I = -50mA 70 400 FE CE C V (sat) * Collector-Emitter Saturation Voltage I = -300mA, I = -30mA -0.35 -0.6 V CE C B * Pulse Test: PW≤350μs, Duty cycle≤2% h Classification FE Classification O Y G h 70 ~ 140 120 ~ 240 200 ~ 400 FE ©2001 Rev. A1, June 2001
