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KSA928ASAMSUNGN/a3000avaiPNP Epitaxial Silicon Transistor
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KSA928AYTAFAIRCHILDN/a11500avaiPNP Epitaxial Silicon Transistor


KSA928AYBU ,PNP Epitaxial Silicon TransistorKSA928AKSA928AAudio Power Amplifier• Complement to KSC2328A• Collector Power Dissipation : P =1WC• ..
KSA928AYBU ,PNP Epitaxial Silicon TransistorKSA928AKSA928AAudio Power Amplifier• Complement to KSC2328A• Collector Power Dissipation : P =1WC• ..
KSA928AYTA ,PNP Epitaxial Silicon TransistorKSA928AKSA928AAudio Power Amplifier• Complement to KSC2328A• Collector Power Dissipation : P =1WC• ..
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KSA928A-KSA928AYBU-KSA928AYTA
PNP Epitaxial Silicon Transistor
KSA928A KSA928A Audio Power Amplifier • Complement to KSC2328A • Collector Power Dissipation : P =1W C • 3 Watt Output Application TO-92L 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Base Voltage -30 V CBO V Collector-Emitter Voltage -30 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current -2 A C P Collector Power Dissipation 1 W C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = -100μA, I =0 -30 V CBO C E BV Collector-Emitter Breakdown Voltage I = -10mA, I =0 -30 V CEO C B BV Emitter-Base Breakdown Voltage I = -1mA, I =0 -5 V EBO E C I Collector Cut-off Current V = -30V, I =0 -100 nA CBO CB E I Emitter Cut-off Current V = -5V, I =0 -100 nA EBO EB C h DC Current Gain V = -2V, I = -500mA 100 320 FE CE C V (on) Base-Emitter On Voltage V = -2V, I = -500mA -1.0 V BE CE C V (sat) Collector-Emitter Saturation Voltage I = -1.5A, I = -30mA -2.0 V CE C B C Output Capacitance V = -10V, I =0, f=1MHz 48 pF ob CB E f Current Gain Bandwidth Product V = -2V, I = -500mA 120 MHz T CE C h Classification FE Classification O Y h 100 ~ 200 160 ~ 320 FE ©2002 Rev. A2, September 2002
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