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KSB1017YTUFAIRCHILN/a100avaiPNP Epitaxial Silicon Transistor


KSB1017YTU ,PNP Epitaxial Silicon TransistorApplications Complement to KSD1408TO-220F11.Base 2.Collector 3.EmitterPNP Silicon Epitaxial ..
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KSB1017YTU
PNP Epitaxial Silicon Transistor
KSB1017 KSB1017 Power Amplifier Applications  Complement to KSD1408 TO-220F 1 1.Base 2.Collector 3.Emitter PNP Silicon Epitaxial Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage - 80 V CBO V Collector-Emitter Voltage - 80 V CEO V Emitter-Base Voltage - 5 V EBO I Collector Current - 4 A C I Base Current - 0.4 A B P Collector Dissipation ( T =25°C) 25 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Emitter Breakdown Voltage I = - 50mA, I = 0 -80 V CEO C B I Collector Cut-off Current V = - 80V, I = 0 - 30 μA CBO CB E I Emitter Cut-off Current V = - 5V, I = 0 - 100 μA EBO EB C h DC Current Gain V = - 5V, I = - 0.5A 40 240 FE1 CE C h V = - 5V, I = - 3A 15 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I = - 3A, I = - 0.3A - 1 - 1.7 V CE C B V (on) Base-Emitter ON Voltage V = - 5V, I = - 3A - 1 - 1.5 V BE CE C f Current Gain Bandwidth Product V = - 5V, I = - 0.5A 9 MHz T CE C C Output Capacitance V = - 10V, f = 1MHz 130 pF ob CB h Classification FE Classification R O Y h 40 ~ 80 70 ~ 140 120 ~ 240 FE1 ©2000 Fairchild Semiconductor International Rev. A, February 2000
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