KSB1116GTA ,PNP Epitaxial Silicon TransistorKSB1116/1116AKSB1116/1116AAudio Frequency Power Amplifier & Medium Speed Switching• Complement to K ..
KSB1116GTA ,PNP Epitaxial Silicon TransistorKSB1116/1116AKSB1116/1116AAudio Frequency Power Amplifier & Medium Speed Switching• Complement to K ..
KSB1121 ,PNP Epitaxial Planar Silicon TransistorKSB1121KSB1121High Current Driver
KSB1121-STF ,PNP Epitaxial Planar Silicon TransistorApplications• Low Collector-Emitter Saturation Voltage• Large Current Capacity and Wide SOA• Fast S ..
KSB1121-STF ,PNP Epitaxial Planar Silicon TransistorApplications• Low Collector-Emitter Saturation Voltage• Large Current Capacity and Wide SOA• Fast S ..
KSB1121-TTF ,PNP Epitaxial Planar Silicon TransistorKSB1121KSB1121High Current Driver
L8550HPLT1G , General Purpose Transistors PNP Silicon Epitaxial planar type.
L8550HRLT1G , General Purpose Transistors PNP Silicon Epitaxial planar type.
L8550QLT1 , General Purpose Transistors PNP Silicon
L8550QLT1 , General Purpose Transistors PNP Silicon
L88M09T ,Voltage Regulators: 9V low-saturation voltage regulatorFeatures.Output voltage L88M33T: 3.3 V L88M05T: 5 VL88M09T: 9 V L88M12T: 12 V.500 mAoutput current. ..
L88M33T ,Voltage Regulators: 3.3V low-saturation voltage regulatorOperating Characteristics at Tj = 25°C, V =8V,I = 500 mA, C = 100μF, C = 1μF,IN O OUT INsee specifi ..
KSB1116GTA
PNP Epitaxial Silicon Transistor
KSB1116/1116A KSB1116/1116A Audio Frequency Power Amplifier & Medium Speed Switching • Complement to KSD1616/1616A TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Base Voltage : KSB1116 -60 V CBO : KSB1116A -80 V V Collector-Emitter Voltage : KSB1116 -50 V CEO : KSB1116A -60 V V Emitter-Base Voltage -6 V EBO I Collector Current (DC) -1 A C I * Collector Current (Pulse) -2 A CP P Collector Power Dissipation 0.75 W C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG * PW≤10ms, Duty Cycle≤50% Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units I Collector Cut-off Current V = -60V, I =0 -100 nA CBO CB E I Emitter Cut-off Current V = -6V, I = 0 -100 nA EBO EB C h * DC Current Gain : KSB1116 V = -2V, I = -100mA 135 600 FE1 CE C : KSB1116A 135 400 h V = -2V, I = -1A 81 FE2 CE C V (on) * Base-Emitter On Voltage V = -2V, I = -50mA -600 -650 -700 mV BE CE C V (sat) * Collector-Emitter Saturation Voltage I = -1A, I = -50mA -0.2 -0.3 V CE C B V (sat) * Base-Emitter Saturation Voltage I = -1A, I = -50mA -0.9 -1.2 V BE C B C Output Capacitance V = -10V, I =0, f=1MHz 25 pF ob CB E f Current Gain Bandwidth Product V = -2V, I = -100mA 70 120 MHz T CE C t Turn On Time V = -10V, I = -100mA 0.07 μs ON CC C I = -I = -10mA t Storage Time B1 B2 0.7 μs STG V (off)= 2~3V BE t Fall Time 0.07 μs F * Pulse Test: PW ≤350μs, Duty Cycle≤2% h Classification FE Classification Y G L h 135 ~ 270 200 ~ 400 300 ~ 600 FE1 ©2002 Rev. A2, January 2002
