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KSB907TUFSCN/a1086avaiPNP Silicon Darlington Transistor


KSB907TU ,PNP Silicon Darlington TransistorApplications High DC Current Gain Low Collector-Emitter Saturation Voltage Built-in Damper Diode ..
KSC1008 ,NPN (LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING)
KSC1008Y , Low Frequency Amplifier Medium Speed Switching
KSC1008Y , Low Frequency Amplifier Medium Speed Switching
KSC1008-Y , Low Frequency Amplifier Medium Speed Switching
KSC1008-Y , Low Frequency Amplifier Medium Speed Switching
L88M09T ,Voltage Regulators: 9V low-saturation voltage regulatorFeatures.Output voltage L88M33T: 3.3 V L88M05T: 5 VL88M09T: 9 V L88M12T: 12 V.500 mAoutput current. ..
L88M33T ,Voltage Regulators: 3.3V low-saturation voltage regulatorOperating Characteristics at Tj = 25°C, V =8V,I = 500 mA, C = 100μF, C = 1μF,IN O OUT INsee specifi ..
L88MS05T ,4 to 12 V, 0.5 A Low Dropout Voltage Regulator with On/Off FunctionOperating Characteristics at Tj = 25°C, V =7V,I = 500 mA, C = 100μF, C ,Cn=1μF,IN O OUT INsee speci ..
L88MS05T ,4 to 12 V, 0.5 A Low Dropout Voltage Regulator with On/Off FunctionPin AssignmentSet size can be miniaturized with compact TP-5H powerpackage..Surface mounting on boa ..
L88MS09T ,4 to 12 V, 0.5 A Low Dropout Voltage Regulator with On/Off FunctionOperating Characteristics at Tj = 25°C, V =8V,I = 500 mA, C = 100μF, C ,Cn=1μF,IN O OUT INsee speci ..
L88MS12T ,4 to 12 V, 0.5 A Low Dropout Voltage Regulator with On/Off FunctionOperating Characteristics at Tj = 25°C, V =9V,I = 500 mA, C = 100μF, C ,Cn=1μF,IN O OUT INsee speci ..


KSB907TU
PNP Silicon Darlington Transistor
KSB907 KSB907 Power Amplifier Applications  High DC Current Gain  Low Collector-Emitter Saturation Voltage  Built-in Damper Diode at E-C  Darlington TR  Complement to KSD1222 1 I-PACK 1. Base 2. Collector 3. Emitter PNP Silicon Darlington Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage - 60 V CBO V Collector-Emitter Voltage - 40 V CEO V Emitter-Base Voltage - 5 V EBO I Collector Current(DC) - 3 A C I Base Current - 0.3 A B P Collector Dissipation (T =25°C) 15 W C a P Collector Dissipation (T =25°C) 1 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector- Emitter Breakdown Voltage I = - 25mA, I = 0 - 40 V CEO C B I Collector Cut-off Current V = - 60V, I = 0 - 20 μA CBO CB E I Emitter Cut-off Current V = - 5V, I = 0 - 2.5 μA EBO EB C h DC Current Gain V = - 2V, I = - 1A 2000 FE1 CE C h V = - 2V, I = - 3A 1000 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I = - 2A, I = - 4mA - 1.5 V CE C B V (sat) Base-Emitter Saturation Voltage I = - 2A, I = - 4mA - 2 V BE C B t Turn ON Time V = - 30V, I = - 3A 0.3 μs ON CC C I = - I = - 6mA t Storage Time B1 B2 0.6 μs STG R = 10Ω L t Fall Time 0.25 μs F ©2000 Fairchild Semiconductor International Rev. A, February 2000
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