KSC2001GTA ,NPN Epitaxial Silicon TransistorApplications• High h and Low V (sat)FE CE TO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Si ..
KSC2001GTA ,NPN Epitaxial Silicon TransistorKSC2001KSC2001General Purpose
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KSC2001GTA
NPN Epitaxial Silicon Transistor
KSC2001 KSC2001 General Purpose Applications • High h and Low V (sat) FE CE TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 30 V CBO V Collector-Emitter Voltage 25 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 700 mA C I Base Current 150 mA B P Collector Power Dissipation 600 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units V (on) * Base Emitter On Voltage V =6V, I =10mA 600 640 700 mV BE CE C I Collector Cut-off Current V =30V, I =0 100 nA CBO CB E I Emitter Cut-off Current V =5V, I=0 100nA EBO EB C h * DC Current Gain V =1V, I =100mA 90 200 400 FE1 CE C h V =1V, I =700mA 50 140 FE2 CE C V (sat) * Collector-Emitter Saturation Voltage I =700mA, I =70mA 0.2 0.6 V CE C B V (sat) * Base-Emitter Saturation Voltage I =700mA, I=70mA 0.951.2V BE C B C Output Capacitance V =6V, I =0, f=1MHz 13 25 pF ob CB E f Current Gain Bandwidth Product V =6V, I =10mA 50 170 MHz T CE C * Pulse test: PW≤350μs, Duty cycle≤2% h Classification FE Classification O Y G h 90 ~ 180 135 ~ 270 200 ~ 400 FE1 ©2002 Rev. A2, September 2002
