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KSC2073H2TUFAIRCHILDN/a219avaiNPN Epitaxial Silicon Transistor
KSC2073TUFAIRCHILDN/a421avaiNPN Epitaxial Silicon Transistor
KSC2073TUFSCN/a100avaiNPN Epitaxial Silicon Transistor


KSC2073TU ,NPN Epitaxial Silicon TransistorKSC2073KSC2073TV Vertical Deflection Output Complement to KSA940 Collector-Base Voltage : V = 150 ..
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KSC2073H2TU-KSC2073TU
NPN Epitaxial Silicon Transistor
KSC2073 KSC2073 TV Vertical Deflection Output  Complement to KSA940  Collector-Base Voltage : V = 150V CBO TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 150 V CBO V Collector-Emitter Voltage 150 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 1.5 A C P Collector Dissipation (T =25°C) 25 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = 500μA, I = 0 150 V CBO C E BV Collector-Emitter Breakdown Voltage I = 10mA, I = 0 150 V CEO C B BV Emitter-Base Breakdown Voltage I = - 500μA, I = 0 5 V EBO E C I Collector Cut-off Current V = 120V, I = 0 10 μA CBO CB E h DC Current Gain V = 10V, I = 0.5A 40 75 140 FE CE C V (sat) Collector-Emitter Saturation Voltage I = 500mA, I = 50mA 1 V CE C B f Current Gain Bandwidth Product V = 10V, I = 0.5A 4 MHz T CE C C Output Capacitance V =10V, I = 0 50 pF ob CB E f = 1MHz ©2000 Fairchild Semiconductor International Rev. A, February 2000
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