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KSC2258ASTUFAIRCHILDN/a1915avaiNPN Epitaxial Silicon Transistor


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KSC2258ASTU
NPN Epitaxial Silicon Transistor
KSC2258/2258A KSC2258/2258A High Voltage General Amplifier TV Video Output Amplifier  High BV CEO TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage CBO : KSC2258 250 V : KSC2258A 300 V V Collector-Emitter Voltage CEO : KSC2258 250 V : KSC2258A 300 V V Emitter-Base Voltage 6 V EBO I Collector Current (DC) 100 mA C I Collector Current (Pulse) 150 mA CP P Collector Dissipation (T =25°C) 4 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Emitter-Base Breakdown Voltage I = 0.1mA, I = 0 6 V EBO E C I Collector Cut-off Current V = 250V, R = 100KΩ 100 μA CER CE BE h DC Current Gain V = 20V, I = 40mA 40 FE1 CE C h V = 50V, I = 5mA 30 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I = 50mA, I = 5mA 1.2 V CE C B V (on) Base-Emitter On Voltage V = -20V, I = 40mA 1.2 V BE CE C f Current Gain Bandwidth Product V = 10V, I = 10mA 100 MHz T CE C C Output Capacitance V = 50V, f = 1MHz 3 4.5 pF ob CB ©2000 Fairchild Semiconductor International Rev. A, February 2000
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