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KSC2316YTAFAIRCHILN/a1075avaiNPN Epitaxial Silicon Transistor


KSC2316YTA ,NPN Epitaxial Silicon TransistorApplications• Driver Stage Amplifier• Complement to KSA916TO-92L11. Emitter 2. Collector 3. BaseNP ..
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KSC2316YTA
NPN Epitaxial Silicon Transistor
KSC2316 KSC2316 Audio Power Amplifier Applications • Driver Stage Amplifier • Complement to KSA916 TO-92L 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Base Voltage 120 V CBO V Collector-Emitter Voltage 120 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 800 mA C P Collector Power Dissipation 900 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ +150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =1mA, I =0 120 V CBO C E BV Collector-Emitter Breakdown Voltage I =10mA, I =0 120 V CEO C B BV Emitter-Base Breakdown Voltage I =1mA, I=0 5 V EBO E C I Collector Cut-off Current V =120V, I=0 0.1 μA CBO CB E h DC Current Gain V =5V, I =10mA 60 FE1 CE C h V =5V, I =100mA 80 240 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I =500mA, I =50mA 1 V CE C B f Current Gain Bandwidth Product V =5V, I =100mA 120 MHz T CE C C Collector Output Capacitance V =10V,I =0, f=1MHz 30 pF ob CB E h Classification FE Classification O Y h 80-160 120-240 FE2 ©2002 Rev. B1, September 2002
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