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KSC2982UTGN/a1000avaiNPN Epitaxial Silicon Transistor


KSC2982 ,NPN Epitaxial Silicon TransistorKSC2982KSC2982Strobe Flash & Medium Power Amplifier Excellent h Linearity : h =140 ~ 600FE FE1 Lo ..
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L9177 ,Specific Functions, Engine Control IcsFeatures– Minimum guaranteed output current 500 mA - full step Supply voltage from 6 V to 18 V– Ro ..
L9222D ,QUAD INVERTING TRANSISTOR SWITCHFEATURESFigure 1. Packages■ OUTPUT VOLTAGE TO 50V■ OUTPUT CURRENT TO 1.2A■ VERY LOW SATURATION VOLT ..
L9305A ,DUAL HIGH CURRENT RELAY DRIVERblock diagram unless otherwise5 ambspecified)Symbol Parameter Test Conditions Min. Typ. Max. UnitV5 ..
L9308 ,DUAL LOW SIDE DRIVERL9308DUAL LOW SIDE DRIVER. DARLINGTON OUTPUT STAGE. INPUT COMPARATOR WITH WIDE RANGECOMMON MODE OPE ..
L9308 ,DUAL LOW SIDE DRIVERL9308DUAL LOW SIDE DRIVER. DARLINGTON OUTPUT STAGE. INPUT COMPARATOR WITH WIDE RANGECOMMON MODE OPE ..
L9308 ,DUAL LOW SIDE DRIVERBLOCK DIAGRAMOctober 1990 1/7This is advanced information on a new product now in development or un ..


KSC2982
NPN Epitaxial Silicon Transistor
KSC2982 KSC2982 Strobe Flash & Medium Power Amplifier  Excellent h Linearity : h =140 ~ 600 FE FE1  Low Collector-Emitter Saturation Voltage : V (sat)=0.5V CE  Collector Dissipation : P =1~2W in Mounted on Ceramic Board C SOT-89 1 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 30 V CBO V Collector-Emitter Voltage 30 V CES V Collector-Emitter Voltage 10 V CEO V Emitter Base Voltage 6 V EBO I Collector Current (DC) 2 A C I * Collector Current (Pulse) 4 A CP I Base Current (DC) 0.4 A B I * Base Current (Pulse) 0.8 A BP P Collector Power Dissipation 500 mW C P * 1,000 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG * PW≤10ms, Duty Cycle≤30% 2 Mounted on Ceramic Board (250mm x0.8mm) Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Emitter Breakdown Voltage I =10mA, I =0 10 V CEO C B BV Emitter-Base Breakdown Voltage I =1mA, I =0 6 V EBO E C I Collector Cut-off Current V =30V, I =0 100 nA CBO CB E I Emitter Cut-off Current V =6V, I =0 100 nA EBO BE C h DC Current Gain V =1V, I =0.5A 140 600 FE1 CE C h V =1V, I =2A 70 140 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I =2A, I =50mA 0.2 0.5 V CE C B V (on) Base-Emitter On Voltage V =1V, I =2A 0.86 1.5 V BE CE C f Current Gain Bandwidth Product V =1V, I =2A 150 MHz T CE C Output Capacitance V =10V, I =0, f=1MHz 27 pF C CB E ob h Classification FE1 Classification A B C D h 140 ~ 240 200 ~ 330 300 ~ 450 420 ~ 600 FE1 Marking SSX h grade FE ©2003 Rev. A3, February 2003
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