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KSC3123YMTFFAIRCHILN/a9000avaiNPN Epitaxial Silicon Transistor


KSC3123YMTF ,NPN Epitaxial Silicon TransistorKSC3123KSC3123Mixer for UHF TV Tuner3•G =23dBCE•C =0.4pFRE21SOT-231. Base 2. Emitter 3. Collect ..
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L9305A ,DUAL HIGH CURRENT RELAY DRIVERblock diagram unless otherwise5 ambspecified)Symbol Parameter Test Conditions Min. Typ. Max. UnitV5 ..
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L9308 ,DUAL LOW SIDE DRIVERBLOCK DIAGRAMOctober 1990 1/7This is advanced information on a new product now in development or un ..


KSC3123YMTF
NPN Epitaxial Silicon Transistor
KSC3123 KSC3123 Mixer for UHF TV Tuner 3 •G =23dB CE •C =0.4pF RE 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 30 V CBO V Collector-Emitter Voltage 20 V CEO V Emitter-Base Voltage 3 V EBO I Collector Current 50 mA C I Base Current 25 mA B P Collector Power Dissipation 150 mW C T Junction Temperature 1500 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Emitter Breakdown Voltage I =1mA, I =0 20 V CEO C B I Collector Cut-off Current V =25V, I =0 0.1 μA CBO CB E I Emitter Cut-off Current V =3V, I =0 1 μA EBO EB C h DC Current Gain V =10V, I =5mA 60 240 FE CE C f Current Gain Bandwidth Product V =10V, I=5mA 9001400 MHz T CE C C Reverse Transfer Capacitance V =10V, I =0, f=1MHz 0.4 0.5 pF RE CB E G Conversion Gain V =12V, f=200MHz 20 23 dB CE CC f =260MHz L NF Output Capacitance V =12V, f=200MHz, 3.8 5.5 dB CE f =260MHz L h Classification FE Classification R O Y h 60 ~ 120 90 ~ 180 120 ~ 240 FE Marking HAO h grade FE ©2002 Rev. A2, September 2002
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