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KSC5042FFAIRCHILDN/a600avaiNPN Triple Diffused Planar Silicon Transistor


KSC5042F ,NPN Triple Diffused Planar Silicon TransistorKSC5042FKSC5042FHigh Voltage Switchihg Dynamic Focus Application High Collector-Emitter Breakdown ..
KSC5042FTU ,NPN Triple Diffused Planar Silicon TransistorKSC5042FKSC5042FHigh Voltage Switchihg Dynamic Focus Application High Collector-Emitter Breakdown ..
KSC5042FTU ,NPN Triple Diffused Planar Silicon TransistorKSC5042FKSC5042FHigh Voltage Switchihg Dynamic Focus Application High Collector-Emitter Breakdown ..
KSC5042F-YDTU ,NPN Triple Diffused Planar Silicon TransistorKSC5042FKSC5042FHigh Voltage Switchihg Dynamic Focus Application High Collector-Emitter Breakdown ..
KSC5042MSTU ,NPN Triple Diffused Planar Silicon TransistorKSC5042MKSC5042MHigh Voltage Switchihg Dynamic Focus Application High Collector-Emitter Breakdown ..
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KSC5042F
NPN Triple Diffused Planar Silicon Transistor
KSC5042F KSC5042F High Voltage Switchihg Dynamic Focus Application  High Collector-Emitter Breakdown Voltage : BV =900V CEO Small C =2.8pF (Typ.) ob Wide S.O.A  High reliability TO-220F 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 1500 V CBO V Collector-Emitter Voltage 900 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current (DC) 100 mA C I Collector Current (Pulse) 300 mA CP P Collector Dissipation (T =25°C) 6 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = 1mA, I = 0 1500 V CBO C E BV Collector-Emitter Breakdown Voltage I = 5mA, I = 0 900 V CEO C B BV Emitter-Base Breakdown Voltage I = 1mA, I = 0 5 V EBO E C I Collector Cut-off Current V = 900V, I = 0 10 μA CBO CB E I Emitter Cut-off Current V = 4V, I = 0 10 μA EBO EB C h DC Current Gain V = 5V, I = 10mA 30 FE CE C V (sat) Collector-Emitter Saturation Voltage I = 20mA, I = 4mA 5 V CE C B V (sat) Base-Emitter Saturation Voltage I = 20mA, I = 4mA 2 V BE C B C Output Capacitance V = 100V, f = 1MHz 2.8 pF ob CB ©2000 Fairchild Semiconductor International Rev. A, February 2000
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