KSC5603D ,NPN Silicon Transistor Planar Silicon TransistorElectrical Characteristics T =25°C unless otherwise notedCSymbol Parameter Test Condition Min. Typ. ..
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KSC5603D
NPN Silicon Transistor Planar Silicon Transistor
KSC5603D KSC5603D High Voltage High Speed Power Switch Equivalent Circuit Application C • Wide Safe Operating Area • Built-in Free Wheeling Diode • Suitable for Electronic Ballast Application B • Small Variance in Storage Time TO-220 1 1.Base 2.Collector 3.Emitter E NPN Silicon Transistor Planar Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 1600 V CBO V Collector-Emitter Voltage 800 V CEO V Emitter-Base Voltage 12 V EBO I Collector Current (DC) 3 A C I *Collector Current (Pulse) 6 A CP I Base Current (DC) 2 A B I *Base Current (Pulse) 4 A BP P Power Dissipation(T =25°C) 100 W C C T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG * Pulse Test: Pulse Width=5ms, Duty Cycle < 10% Thermal Characteristics T =25°C unless otherwise noted C Symbol Characteristics Rating Unit R Thermal Resistance Junction to Case 1.25 °C/W θjc R Junction to Ambient 62.5 θja T Maximun Lead Temperature for Soldering Purpose 270 °C L : 1/8” from Case for 5 seconds ©2002 Rev. B, April 2002
