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KSD1273PTUFAIRCHILDN/a3591avaiNPN Epitaxial Silicon Transistor


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KSD1273PTU
NPN Epitaxial Silicon Transistor
KSD1273 KSD1273 High h , AF Power Amplifier FE • ”Full PAK” Package for Simplified Mounting Only by a Screw, Requires no Insulator. TO-220F 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 80 V CBO V Collector-Emitter Voltage 60 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current (DC) 3 A C I Collector Current (Pulse) 6 A CP I Base Current 1 A B P Collector Dissipation (T =25°C) 2 W C a P Collector Dissipation (T =25°C) 40 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Emitter Voltage I = 25mA, I = 0 60 V CEO C B I Collector Cut-off Current V = 80V, I = 0 100 μA CBO CB E I Collector Cut-off Current V = 60V, I = 0 100 μA CEO CE B I Emitter Cut-off Current V = 6V, I = 0 100 μA EBO EB C h DC Current Gain V = 4V, I = 0.5A 500 2500 FE CE C V (sat) Collector-Emitter Saturation Voltage I = 2A, I = 0.05A 1 V CE C B f Current Gain Bandwidth Product V = 12V, I = 0.2A 30 MHz T CE C h Classification FE Classification Q P O h 500 ~ 1000 800 ~ 1500 1200 ~ 2500 FE ©2001 Rev. A1, June 2001
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