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KSD1406FAIRCHILDN/a4000avaiNPN Epitaxial Silicon Transistor


KSD1406 ,NPN Epitaxial Silicon TransistorKSD1406KSD1406Low Frequency Power Amplifier Low Collector-Emitter Saturation Voltage Complement t ..
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KSD1406
NPN Epitaxial Silicon Transistor
KSD1406 KSD1406 Low Frequency Power Amplifier  Low Collector-Emitter Saturation Voltage  Complement to KSB1015 TO-220F 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 60 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current 3 A C I Base Current 0.5 A B P Collector Dissipation (T =25°C) 25 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Emitter Breakdown Voltage I = 50mA, I = 0 60 V CEO C B I Collector Cut-off Current V = 60V, I = 0 100 μA CBO CB E I Emitter Cut-off Current V = 7V, I = 0 100 μA EBO EB C h DC Current Gain V = 5V, I = 0.5A 60 300 FE1 CE C h V = 5V, I = 3A 20 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I = 3A, I = 0.3A 0.4 1 V CE C B V (on) Base-Emitter ON Voltage V = 5V, I = 0.5A 0.7 1 V BE CE C f Current Gain Bandwidth Product V = 5V, I = 0.5A 3 MHz T CE C C Output Capacitance V = 10V, f = 1MHz 70 pF ob CB t Turn ON Time V = 30V, I = 1A 0.8 μs ON CC C I = -I = 0.2A t Storage Time B1 B2 1.5 μs STG R = 30Ω L t Fall Time 0.8 μs F h Classification FE1 Classification O Y G h 60 ~ 120 100 ~ 200 150 ~ 300 FE1 ©2000 Fairchild Semiconductor International Rev. A, February 2000
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